Effect of Ar Annealing Temperature on SiO2/SiC: Carbon-Related Clusters Reduction Causing Interfacial Quality Improvement

Zhi Qin Zhong; Lu Da Zheng; Guo Jun Zhang; Shu Ya Wang; Li Ping Dai; Ying Ling Gong

doi:10.4028/www.scientific.net/AMR.997.484

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 997Effect of Ar Annealing Temperature on SiO2/SiC:...

Effect of Ar Annealing Temperature on SiO₂/SiC: Carbon-Related Clusters Reduction Causing Interfacial Quality Improvement

Abstract:

The authors investigated the effects of annealing in Ar atmosphere at different temperatures (350 °C, 600 °C, and 900 °C) on the thermally oxidized SiO₂/4H-SiC interface. A strong correlation between C-related clusters reduction and SiO₂/SiC interfacial improvement was observed. The C-related clusters, which were characterized by field-emission scanning electron microscopy, and energy-dispersive spectrometry, can be significantly reduced after annealing at moderate temperature (600 °C). This sample annealed at 600 °C exhibited the best interfacial quality of SiO₂/SiC from capacitance–voltage measurement. Based on the studies, improvements in the quality of the SiO₂/SiC interface after annealing at 600 °C may be explained by the reduction of C-related clusters during annealing.

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Periodical:

Advanced Materials Research (Volume 997)

Pages:

484-487

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.997.484

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Online since:

August 2014

Authors:

Zhi Qin Zhong*, Lu Da Zheng, Guo Jun Zhang, Shu Ya Wang, Li Ping Dai, Ying Ling Gong

Keywords:

Annealed in Ar, C-Related Clusters, C–V Characteristics, Interface Improvement, SiO₂/4H-SiC Interface

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