Deep Level Centers in Carbon-Doped High Resistivity GaN

Huan Cui; Li Wu Lu; Ling Sang; Bai He Chen; Zhi Wei He; Bo Shen; Xue Lin Yang

doi:10.4028/www.scientific.net/AMR.997.492

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 997Deep Level Centers in Carbon-Doped High...

Deep Level Centers in Carbon-Doped High Resistivity GaN

Abstract:

The deep levels of carbon doped high resistivity (HR) GaN samples grown by metal-organic chemical vapor deposition (MOCVD) has been investigated using thermally stimulated current (TSC) spectroscopy and high temperature (HT) Hall measurement. Two different thickness of 100 and 300 nm were used to be compared. It was found that four distinct deep levels by TSC and one deep level by HT Hall measurement were observed in both samples, which means great help for the decrease of leakage current and lifetime limitations of device utilizing the structure. The activation energy of these levels was calculated and their possible origins were also proposed. The low temperature traps, might be related to V_N, 0.50 and 0.52eV related to incorporate a high level carbon, 0.57eV related to V_Ga, 0.59eV related to C_Ga or N_Ga, 0.91 and 0.97eV related to interstitial N₁ .

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Periodical:

Advanced Materials Research (Volume 997)

Pages:

492-495

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.997.492

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Online since:

August 2014

Authors:

Huan Cui, Li Wu Lu, Ling Sang, Bai He Chen, Zhi Wei He*, Bo Shen, Xue Lin Yang

Keywords:

C-Doped, Deep Levels, HR-GaN, HT-Hall, TSC

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