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HomeAdvances in Science and TechnologyAdvances in Science and Technology Vol. 45Low Temperature MOCVD-Processed Alumina Coatings

Low Temperature MOCVD-Processed Alumina Coatings

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Abstract:

We first present a Review about the preparation of alumina as thin films by the technique of MOCVD at low temperature (550°C and below). Then we present our results about thin films prepared by the low pressure MOCVD technique, using aluminium tri-isopropoxide as a source, and characterized by elemental analysis (EMPA, EDS, ERDA, RBS), FTIR, XRD and TGA. The films were grown in a horizontal, hot-wall reactor, with N2 as a carrier gas either pure or added with water vapour. The deposition temperature was varied in the range 350-550°C. The films are amorphous. Those prepared at 350°C without water added in the gas phase have a formula close to AlOOH. Those deposited above 415°C are made of pure alumina Al2O3. When water is added in the gas phase, the films are pure alumina whatever the deposition temperature.

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11th International Ceramics Congress

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Periodical:

Advances in Science and Technology (Volume 45)

Pages:

1184-1193

DOI:

https://doi.org/10.4028/www.scientific.net/AST.45.1184

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Online since:

October 2006

Authors:

Alain Gleizes, Maria Magdalena Şovar, Diane Samelor, C. Vahlas

Keywords:

Aluminium Tri-Isopropoxide, Aluminum (Al), LP-MOCVD, Review, Thin Film

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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