Thin Film YBCO Pixels for MMW Detector

Eugene Zakar; D. Wikner; Madan Dubey; Paul Amirtharaj

doi:10.4028/www.scientific.net/AST.54.434

Paper Titles

3C-SiC Hetero-Epitaxial Films for Sensors Fabrication
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The Mechanical Behaviour of Silicon Diaphragms for Micromachined Capacitive Pressure Sensor
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GaAs Non Resonant Micro-Sensors: Design and Simulations
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Thin Film YBCO Pixels for MMW Detector
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Micromask Generation for Polymer Morphology Control: Nanohair Fabrication for Synthetic Dry Adhesives
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Wet Etching of Si Micro-Arrays: Experimental and Theoretical Shapes
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Nanoparticles for Charge Storage Using Hybrid Organic Inorganic Devices
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Non-Volatile Memory Devices Based on Diphenyl Bithiophenes
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HomeAdvances in Science and TechnologyAdvances in Science and Technology Vol. 54Thin Film YBCO Pixels for MMW Detector

Thin Film YBCO Pixels for MMW Detector

Abstract:

This research addresses the fabrication of crack-free 40-nm thin film YBa2Cu3O7 (YBCO) pixel structures based on high temperature superconductor (HTSC) microbolometers for highly sensitive thermal detectors that can be miniaturized for affordable passive millimeter-wave (MMW) imaging. A completely dry etch process is described for suspended transition edge bolometers by removing (releasing) the silicon substrate underneath a 3 micrometer wide pixel using gaseous plasma sulfurhexafluoride (SF6) chemical reaction. This is an improvement over conventional selective wet chemical etching techniques that are both harsh on the YBCO and require additional complex alignment steps to the substrate material leading to very poor device yields and performance. Issues relating to material roughness, etch redeposition, and silicon undercutting will be analyzed and methodologies to overcome/minimize such problems will be explained in detail.