Non-Volatile Memory Devices Based on Diphenyl Bithiophenes
Non volatile memory devices have been developed using diphenyl bithiophene derivatives (DPBT) as active layer. The devices, developed with a two terminal vertical structure where the spin cast organic layer is sandwiched between two electrodes, behave as bistable conductance switching memory cells; the modification of the electrodes material and of the organic layer composition introduces significant changes in the electrical behaviour, that give some indications on the molecular origin of the electrical bistability. These data are enriched by in-situ spectroscopic experiments.
Pietro VINCENZINI and Giuseppe D'ARRIGO
E. V. Canesi et al., "Non-Volatile Memory Devices Based on Diphenyl Bithiophenes", Advances in Science and Technology, Vol. 54, pp. 458-463, 2008