Effect of Various Electrode Materials in Non-Volatile Memory Device Using Poly(3,4-Ethylenedioxythiophene):Poly(Styrenesulfonate) (PEDOT:PSS) Thin Films

Abstract:

We have studied the effect of various electrodes on non-volatile polymer memory devices. The ITO/PEDOT:PSS/Top electrode (TE) devices had bipolar switching behavior. The OFF current level of devices increased from 3×10-4 A to 3×10-3 A and the ON voltage decreased from 0.8 V to 0.5 V as the TE work function increased. The yield of devices decreased from over 50 % to under 10 % as the TE work function of devices increased. This result occurred because carrier injection was affected by the TE work function.

• Periodical: Advances in Science and Technology (Volume 54)
• Pages: 470-473
• DOI: https://doi.org/10.4028/www.scientific.net/AST.54.470
• Online since: September 2008
• Authors: Hun Jun Ha, J.M. Lee, M. Kim, O.H. Kim
• Keywords: Non-Volatile Memory (NVM), PEDOT/PSS, Various Electrodes, Work Function

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