Effect of Various Electrode Materials in Non-Volatile Memory Device Using Poly(3,4-Ethylenedioxythiophene):Poly(Styrenesulfonate) (PEDOT:PSS) Thin Films

Abstract:

Article Preview

We have studied the effect of various electrodes on non-volatile polymer memory devices. The ITO/PEDOT:PSS/Top electrode (TE) devices had bipolar switching behavior. The OFF current level of devices increased from 3×10-4 A to 3×10-3 A and the ON voltage decreased from 0.8 V to 0.5 V as the TE work function increased. The yield of devices decreased from over 50 % to under 10 % as the TE work function of devices increased. This result occurred because carrier injection was affected by the TE work function.

Info:

Periodical:

Edited by:

Pietro VINCENZINI and Giuseppe D'ARRIGO

Pages:

470-473

DOI:

10.4028/www.scientific.net/AST.54.470

Citation:

H. J. Ha et al., "Effect of Various Electrode Materials in Non-Volatile Memory Device Using Poly(3,4-Ethylenedioxythiophene):Poly(Styrenesulfonate) (PEDOT:PSS) Thin Films", Advances in Science and Technology, Vol. 54, pp. 470-473, 2008

Online since:

September 2008

Export:

Price:

$35.00

In order to see related information, you need to Login.