Nanoparticles for Charge Storage Using Hybrid Organic Inorganic Devices

Abstract:

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We present a concept for integration of low temperature fabricated memory devices in a 3-D architecture using a hybrid silicon-organic technology. The realization of electrically erasable read-only memory (EEPROM) like device is based on the fabrication of a V-groove SiGe MOSFET, the functionalization of a gate oxide followed by self-assembly of gold nanoparticles and finally, the deposition of an organic insulator by Langmuir-Blodgett (LB) technique. Such structures were processed at a temperature lower than 400°C following a process based on wafer bonding. The electrical characteristics of the final hybrid MISFET memory cells were evaluated in terms of memory window and program/erase voltage pulses. A model describing the memory characteristics, based on the electronic properties of the gate stack materials, is presented.

Info:

Periodical:

Edited by:

Pietro VINCENZINI and Giuseppe D'ARRIGO

Pages:

451-457

DOI:

10.4028/www.scientific.net/AST.54.451

Citation:

D. Tsoukalas et al., "Nanoparticles for Charge Storage Using Hybrid Organic Inorganic Devices", Advances in Science and Technology, Vol. 54, pp. 451-457, 2008

Online since:

September 2008

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$35.00

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