Nanoparticles for Charge Storage Using Hybrid Organic Inorganic Devices

Dimitris Tsoukalas; S. Kolliopoulou; P. Dimitrakis; P. Normand; M.C. Petty

doi:10.4028/www.scientific.net/AST.54.451

Paper Titles

GaAs Non Resonant Micro-Sensors: Design and Simulations
p.428

Thin Film YBCO Pixels for MMW Detector
p.434

Micromask Generation for Polymer Morphology Control: Nanohair Fabrication for Synthetic Dry Adhesives
p.439

Wet Etching of Si Micro-Arrays: Experimental and Theoretical Shapes
p.445

Nanoparticles for Charge Storage Using Hybrid Organic Inorganic Devices
p.451

Non-Volatile Memory Devices Based on Diphenyl Bithiophenes
p.458

Resistive Electrical Switching of Nonvolatile Memories from Electrodeposited Copper Tetracyanoquinodimethane (CuTCNQ)
p.464

Effect of Various Electrode Materials in Non-Volatile Memory Device Using Poly(3,4-Ethylenedioxythiophene):Poly(Styrenesulfonate) (PEDOT:PSS) Thin Films
p.470

Fabrication and Characterisation of MIS Organic Memory Devices
p.474

HomeAdvances in Science and TechnologyAdvances in Science and Technology Vol. 54Nanoparticles for Charge Storage Using Hybrid...

Nanoparticles for Charge Storage Using Hybrid Organic Inorganic Devices

Abstract:

We present a concept for integration of low temperature fabricated memory devices in a 3-D architecture using a hybrid silicon-organic technology. The realization of electrically erasable read-only memory (EEPROM) like device is based on the fabrication of a V-groove SiGe MOSFET, the functionalization of a gate oxide followed by self-assembly of gold nanoparticles and finally, the deposition of an organic insulator by Langmuir-Blodgett (LB) technique. Such structures were processed at a temperature lower than 400°C following a process based on wafer bonding. The electrical characteristics of the final hybrid MISFET memory cells were evaluated in terms of memory window and program/erase voltage pulses. A model describing the memory characteristics, based on the electronic properties of the gate stack materials, is presented.