Nanoparticles for Charge Storage Using Hybrid Organic Inorganic Devices
We present a concept for integration of low temperature fabricated memory devices in a 3-D architecture using a hybrid silicon-organic technology. The realization of electrically erasable read-only memory (EEPROM) like device is based on the fabrication of a V-groove SiGe MOSFET, the functionalization of a gate oxide followed by self-assembly of gold nanoparticles and finally, the deposition of an organic insulator by Langmuir-Blodgett (LB) technique. Such structures were processed at a temperature lower than 400°C following a process based on wafer bonding. The electrical characteristics of the final hybrid MISFET memory cells were evaluated in terms of memory window and program/erase voltage pulses. A model describing the memory characteristics, based on the electronic properties of the gate stack materials, is presented.
Pietro VINCENZINI and Giuseppe D'ARRIGO
D. Tsoukalas et al., "Nanoparticles for Charge Storage Using Hybrid Organic Inorganic Devices", Advances in Science and Technology, Vol. 54, pp. 451-457, 2008