Resistive Electrical Switching of Nonvolatile Memories from Electrodeposited Copper Tetracyanoquinodimethane (CuTCNQ)

Robert Müller; A. Katzenmeyer; Olivier Rouault; Ludovic Goux; Dirk J. Wouters; Jan Genoe; Paul Heremans

doi:10.4028/www.scientific.net/AST.54.464

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HomeAdvances in Science and TechnologyAdvances in Science and Technology Vol. 54Resistive Electrical Switching of Nonvolatile...

Resistive Electrical Switching of Nonvolatile Memories from Electrodeposited Copper Tetracyanoquinodimethane (CuTCNQ)

Abstract:

CuTCNQ is a charge transfer complex displaying resistive electrical switching when sandwiched between Cu and Al contacts. Corresponding memory cells switch from a native high resistive OFF state (HRS) to a low resistive ON state (LRS) by applying a negative voltage to the Al with respect to the Cu. Inversion of the signal polarity leads to switching from the LRS to the HRS. Typical CuTCNQ preparation occurs by a chemical reaction of a Cu substrate with TCNQ, involving (partial) corrosion of the metal. In this contribution we present electrodeposition of CuTCNQ on Au and Pt substrates, leading – in contrast to previously published dendritically crystal growth – to relatively smooth, micrometer thick layers. Corresponding large area cross-bar memory arrays (200m by 200m, with Al top contacts) exhibited up to several thousand write/erase cycles with an ON/OFF current ratio of 5-10. Furthermore preliminary growth experiments with blanket tungsten bottom contact Metal–Oxide–Semiconductor (CMOS) wafers with 250 nm diameter contact holes showed that electrodeposition is a suitable method for CuTCNQ integration.