Wet-Etching Characteristics of SiCN Films Deposited by HWCVD Method

Abstract:

We investigated the wet-etching properties of SiCN films using chemical agents. Our results show that sodium hydroxide, potassium hydroxide and phosphoric acid etch SiCN films, while hydrochloric acid, sulfuric acid, acetic acid, ammonium chloride and sodium chloride cannot etch SiCN films.

• Periodical: Advances in Science and Technology (Volume 81)
• Pages: 34-38
• DOI: https://doi.org/10.4028/www.scientific.net/AST.81.34
• Online since: September 2012
• Authors: H. Nakanishi, T. Ogata, Y. Kadotani, Akira Izumi
• Keywords: Hot-Wire CVD, SiCN, Wet Etching

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