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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 143-147Diffusion and Surface Segregation in Thin SiGe/Si...

Diffusion and Surface Segregation in Thin SiGe/Si Layers Studied by Scanning Transmission Electron Microscopy

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Diffusion in Materials DIMAT 1996

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Periodical:

Defect and Diffusion Forum (Volumes 143-147)

Pages:

1135-1140

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.143-147.1135

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Online since:

January 1997

Authors:

T. Walther, Colin J. Humphreys, D.J. Robbins

Keywords:

Activation Energy, Electron Microscopy, Segregation, Silicon-Germanium (SiGe), Strain Enhanced Diffusion

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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