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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 143-147Properties of Ga Self-Interstitials in GaAs...

Properties of Ga Self-Interstitials in GaAs Investigated by In-Diffusion of Cd

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Diffusion in Materials DIMAT 1996

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Periodical:

Defect and Diffusion Forum (Volumes 143-147)

Pages:

1109-1116

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.143-147.1109

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Online since:

January 1997

Authors:

G. Bösker, Nicolaas Stolwijk, Ulf Södervall, Wolfgang Jäger

Keywords:

Arsenic Vapour Pressure, Cadmium Diffusion, Doping-Dependence, Gallium Arsenide, Kick-Out Mechanism, Self-Diffusion, Self-Interstitial, SIMS, Spreading-Resistance Profiling

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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