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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 143-147Dopant Diffusion and Defect Formation in III-V...

Dopant Diffusion and Defect Formation in III-V Semiconductors: Zinc Diffusion in GaAs

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Diffusion in Materials DIMAT 1996

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Periodical:

Defect and Diffusion Forum (Volumes 143-147)

Pages:

1095-1100

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.143-147.1095

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Online since:

January 1997

Authors:

A. Rucki, Wolfgang Jäger

Keywords:

Dislocation, Extended Defects, Gallium Arsenide, Indium Phosphide, Kick-Out Mechanism, Precipitation, Self-Interstitial, Vacancy, Void, Zinc Diffusion

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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