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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 143-147Self-Diffusion Studies using Semiconductor Isotope...

Self-Diffusion Studies using Semiconductor Isotope Heterostructures

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Diffusion in Materials DIMAT 1996

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Periodical:

Defect and Diffusion Forum (Volumes 143-147)

Pages:

1067-1078

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.143-147.1067

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Online since:

January 1997

Authors:

Eugene E. Haller, Lei Wang

Keywords:

Activation Enthalpy, Diffusion, Doping Effect, Entropy, GaAs, GaP, Germanium, Interstitial, Isotope, MBE, Point Defect, Vacancy

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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