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Atomistic Theory and Computer Simulation of Grain Boundary Diffusion
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Diffusion-Induced Instabilities at Internal Interfaces in Solids
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Antimony Diffusion along Symmetric <001> Tilt Grain Boundaries in Copper
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Grain Boundary Self- and Solute Diffusion and Segregation in General Large Angle Grain Boundaries in Copper
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Grain Boundary Diffusion and Electromigration in Cu-Sn Alloy Thin Films and their VLSI Interconnects
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Effect of Temperature and Pressure on Grain Boundary Segregation and Wetting
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Local Structures and Physical Properties of Atomic Probes Localization Regions in the Intercrystalline Diffusion Zone of⁵⁷Co in Polycrystalline Tungsten
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Investigation of Intercrystalline Diffusion of⁵⁷Co in Poycrystalline Tungsten: The Influence of the Atomic Probe Segregation and Segregation of Residual Interstitial Impurities on Regularities of the Intercrystalline Diffusion
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Grain Boundary Diffusion Coefficients of⁵⁹Fe in Alloy 800 and Influence of Interface-Active Elements on Grain Boundary Diffusion
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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 143-147Grain Boundary Diffusion and Electromigration in...

Grain Boundary Diffusion and Electromigration in Cu-Sn Alloy Thin Films and their VLSI Interconnects

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Diffusion in Materials DIMAT 1996

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Periodical:

Defect and Diffusion Forum (Volumes 143-147)

Pages:

1397-1406

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.143-147.1397

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Online since:

January 1997

Authors:

D. Gupta, Chao Kun Hu, K.L. Lee

Keywords:

Activation Energies for Grain Boundary Diffusion and Electromigration, Cu-Sn- System, Electromigration, Grain Boundary Diffusion, Solute Effects, Thin Film

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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