Paper Titles

Diffusion of Dopants and Impurities in GaN and Related Materials
p.63

Donor-Related Deep Levels in in_1-xGa_xAs_yP_1-y
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Annealing-Related Phenomena in Bulk Semi-Insulating Indium Phosphide
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Diffusion and Defects in Yb-Impanted InP
p.113

The Annealing Behavior of Irradiated Diffused Junction and Epitaxial InP Solar Cells
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Hydrogen as a Deep Imputity in Semiconductors and Its Interaction with Deep Centers in III-V Compounds
p.133

Propagation of Dry Etch-Induced Damage in III-V Semiconductors
p.175

Hydrogen Diffusion in III-V Semiconductors: Application to the Fabrication and Optimization of Photonic Devices
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Interplay between Interface Dislocations and Surface Kinetic: A Contribution to the Roughness of Strained Epitaxial Layers
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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 157-159Hydrogen as a Deep Imputity in Semiconductors and...

Hydrogen as a Deep Imputity in Semiconductors and Its Interaction with Deep Centers in III-V Compounds

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Diffusion in GaAs and other III-V Semiconductors

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Periodical:

Defect and Diffusion Forum (Volumes 157-159)

Pages:

133-174

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.157-159.133

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Online since:

March 1998

Authors:

Aldo Amore Bonapasta, Mario Capizzi

Keywords:

Deep Impurity, First-Principles Defect Calculations, Impurity Passivation, Shallow Impurity

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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