Paper Titles

Point Defects and Interdiffusion at GaAs Heterojunctions
p.17

The Investigation of Structures, Defects and Electrical Properties of GaAs Films Implanted with Arsenic Ions
p.37

Diffusion of Dopants and Impurities in GaN and Related Materials
p.63

Donor-Related Deep Levels in in_1-xGa_xAs_yP_1-y
p.83

Annealing-Related Phenomena in Bulk Semi-Insulating Indium Phosphide
p.103

Diffusion and Defects in Yb-Impanted InP
p.113

The Annealing Behavior of Irradiated Diffused Junction and Epitaxial InP Solar Cells
p.125

Hydrogen as a Deep Imputity in Semiconductors and Its Interaction with Deep Centers in III-V Compounds
p.133

Propagation of Dry Etch-Induced Damage in III-V Semiconductors
p.175

HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 157-159Annealing-Related Phenomena in Bulk...

Annealing-Related Phenomena in Bulk Semi-Insulating Indium Phosphide

Article Preview

Abstract:

You might also be interested in these eBooks

Diffusion in GaAs and other III-V Semiconductors

Info:

Periodical:

Defect and Diffusion Forum (Volumes 157-159)

Pages:

103-112

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.157-159.103

Citation:

Cite this paper

Online since:

March 1998

Authors:

J. Jiménez, R. Fornari

Keywords:

Electrical Compensation, Homogeneity, Ingot Annealing, Iron Doping, Native Donors, Wafer Annealing

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1998 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: