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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 157-159The Investigation of Structures, Defects and...

The Investigation of Structures, Defects and Electrical Properties of GaAs Films Implanted with Arsenic Ions

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Diffusion in GaAs and other III-V Semiconductors

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Periodical:

Defect and Diffusion Forum (Volumes 157-159)

Pages:

37-62

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.157-159.37

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Online since:

March 1998

Authors:

Wen-Chung Chen, Shou-Chung Lee, C.S. Chang

Keywords:

Ion Implantation, Photoluminescence (PL), Thermal Annealing

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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