Paper Titles

Diffusion of Dopants and Impurities in GaN and Related Materials
p.63

Donor-Related Deep Levels in in_1-xGa_xAs_yP_1-y
p.83

Annealing-Related Phenomena in Bulk Semi-Insulating Indium Phosphide
p.103

Diffusion and Defects in Yb-Impanted InP
p.113

The Annealing Behavior of Irradiated Diffused Junction and Epitaxial InP Solar Cells
p.125

Hydrogen as a Deep Imputity in Semiconductors and Its Interaction with Deep Centers in III-V Compounds
p.133

Propagation of Dry Etch-Induced Damage in III-V Semiconductors
p.175

Hydrogen Diffusion in III-V Semiconductors: Application to the Fabrication and Optimization of Photonic Devices
p.191

Interplay between Interface Dislocations and Surface Kinetic: A Contribution to the Roughness of Strained Epitaxial Layers
p.211

HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 157-159Hydrogen Diffusion in III-V Semiconductors:...

Hydrogen Diffusion in III-V Semiconductors: Application to the Fabrication and Optimization of Photonic Devices

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Diffusion in GaAs and other III-V Semiconductors

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Periodical:

Defect and Diffusion Forum (Volumes 157-159)

Pages:

191-210

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.157-159.191

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Online since:

March 1998

Authors:

Bertrand Theys

Keywords:

Dopant Passivation, GaAs, InP, Laser, Plasma, Waveguide

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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