Paper Titles

Coalescence Behavior of the Antiphase Domain in Ti₃Al
p.577

Ordering in Cu₃Au: Equilibrium, Kinetics and Domain Growth
p.583

Mechanical Properties of Intermetallic γ-TiAl Based Alloys at Elevated Temperatures
p.589

Diffusion of Dopants and Impurities in Device Structures of SiC, SiGe and Si
p.597

In-Beam Mössbauer Study of Interstitial and Substitutional ⁵⁷Mn/⁵⁷Fe Jumps in Si
p.611

Controlling Process of P Diffusion in Si Based on the Pair Diffusion Model
p.617

Effect of Surface Condition on the Solid Solubility of Substitutional Gold in the Out-Diffusion of Supersaturated Gold in Silicon
p.623

Diffusion of Gold in Germanium
p.629

Diffusion and Solubility of Iridium in Silicon
p.635

HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 194-199In-Beam Mössbauer Study of Interstitial and...

In-Beam Mössbauer Study of Interstitial and Substitutional ⁵⁷Mn/⁵⁷Fe Jumps in Si

Article Preview

Abstract:

You might also be interested in these eBooks

Diffusion in Materials DIMAT2000

Info:

Periodical:

Defect and Diffusion Forum (Volumes 194-199)

Pages:

611-616

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.194-199.611

Citation:

Cite this paper

Online since:

April 2001

Authors:

Y. Yoshida, Y. Kobayashi, K. Hayakawa, K. Yukihira, F. Shimura, A. Yoshida, X. Diao, H. Ogawa, Y. Yano, F. Ambe

Keywords:

Fe Impurity, In-Beam Mössbauer Spectroscopy, Interstitial Fe, Jump Mechanism, On-Line Isotope Separator, Projectile Fragmentation, Silicon, Substitutional Fe

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2001 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: