Diffusion of Dopants and Impurities in Device Structures of SiC, SiGe and Si

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Periodical:

Defect and Diffusion Forum (Volumes 194-199)

Edited by:

Y. Limoge and J.L. Bocquet

Pages:

597-610

DOI:

10.4028/www.scientific.net/DDF.194-199.597

Citation:

M. S. Janson et al., "Diffusion of Dopants and Impurities in Device Structures of SiC, SiGe and Si", Defect and Diffusion Forum, Vols. 194-199, pp. 597-610, 2001

Online since:

April 2001

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$35.00

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