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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 194-199Diffusion of Dopants and Impurities in Device...

Diffusion of Dopants and Impurities in Device Structures of SiC, SiGe and Si

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Diffusion in Materials DIMAT2000

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Periodical:

Defect and Diffusion Forum (Volumes 194-199)

Pages:

597-610

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.194-199.597

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Online since:

April 2001

Authors:

Martin S. Janson, Margareta K. Linnarsson, J.S. Christensen, P. Lévêque, Andrej Yu. Kuznetsov, H.H. Radamson, Anders Hallén, Arne Nylandsted-Larsen, Bengt Gunnar Svensson

Keywords:

Diffusion, Dissociation, Dopant, Electric-Field-Assisted Migration, Hydrogen, Lithium, Passivation, Silicon Carbide (SiC), Silicon-Germanium (SiGe), Transient Enhanced Diffusion TED, Trapping

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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