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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 194-199Controlling Process of P Diffusion in Si Based on...

Controlling Process of P Diffusion in Si Based on the Pair Diffusion Model

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Diffusion in Materials DIMAT2000

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Periodical:

Defect and Diffusion Forum (Volumes 194-199)

Pages:

617-622

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.194-199.617

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Online since:

April 2001

Authors:

Masayuki Yoshida, Masami Morooka, M. Takahashi, H. Tomokage

Keywords:

Controlling Process of P Diffusion, Decrease in Quasi Self-Interstitial Formation Energy, Effective P Diffusion Coefficient, Pair Diffusion Model

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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