Paper Titles

The Search for Tunnelling States in Bulk Silicon Disordered by Fast Neutron Irradiation
p.47

Residual Shallow Donor- and Acceptor-Impurities in SSD- and LEC-Grown High-Purity InP Crystals
p.67

Dislocations in Semiconductors: Core Structure and Mobility
p.97

Analysis of Radiation-Induced Defects in InGaP Materials and Solar Cells
p.107

A Perspective from Crystal Growth and Wafer Processing on the Properties of Intrinsic Point Defects in Silicon
p.125

Copper Complexes in Silicon Crystals
p.135

The Effect of Implant Temperature and Pre-Annealing on Defect Formation after Laser Thermal Processing
p.145

X-Ray Topographic Analysis of Misfit Dislocation Distribution in InGaAs and GeSi/Si Partially Relaxed Heterostructures
p.153

Processing-Induced Defects in Epitaxially Grown p- and n-Type SiGe
p.161

HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 200-202A Perspective from Crystal Growth and Wafer...

A Perspective from Crystal Growth and Wafer Processing on the Properties of Intrinsic Point Defects in Silicon

Article Preview

Abstract:

You might also be interested in these eBooks

Defects and Diffusion in Semiconductors IV

Info:

Periodical:

Defect and Diffusion Forum (Volumes 200-202)

Pages:

125-134

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.200-202.125

Citation:

Cite this paper

Online since:

November 2001

Authors:

Robert J. Falster, Vladimir V. Voronkov

Keywords:

Defect Reactions, Denuded Zones, Interstitial Growth, Perfect Silicon, Rapid Thermal Processing, Vacancy Profiles

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2002 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: