X-Ray Topographic Analysis of Misfit Dislocation Distribution in InGaAs and GeSi/Si Partially Relaxed Heterostructures

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Periodical:

Defect and Diffusion Forum (Volumes 200-202)

Edited by:

D.J. Fisher

Pages:

153-160

DOI:

10.4028/www.scientific.net/DDF.200-202.153

Citation:

C. Ferrari "X-Ray Topographic Analysis of Misfit Dislocation Distribution in InGaAs and GeSi/Si Partially Relaxed Heterostructures", Defect and Diffusion Forum, Vols. 200-202, pp. 153-160, 2002

Online since:

November 2001

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