Quantitative Measurements of Vacancy Defects in High-Energy Ion-Implanted Si

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Periodical:

Defect and Diffusion Forum (Volumes 200-202)

Edited by:

D.J. Fisher

Pages:

177-188

DOI:

10.4028/www.scientific.net/DDF.200-202.177

Citation:

R. Kalyanaraman et al., "Quantitative Measurements of Vacancy Defects in High-Energy Ion-Implanted Si", Defect and Diffusion Forum, Vols. 200-202, pp. 177-188, 2002

Online since:

November 2001

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$35.00

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