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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 200-202Quantitative Measurements of Vacancy Defects in...

Quantitative Measurements of Vacancy Defects in High-Energy Ion-Implanted Si

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Defects and Diffusion in Semiconductors IV

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Periodical:

Defect and Diffusion Forum (Volumes 200-202)

Pages:

177-188

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.200-202.177

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Online since:

November 2001

Authors:

R. Kalyanaraman, T.E. Haynes, V.C. Venezia, D.C. Jacobson, H.J.L. Gossmann, C.S. Rafferty

Keywords:

Au Labelling, Excess Vacancies, High Energy-Implantation

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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