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The Effect of Implant Temperature and Pre-Annealing on Defect Formation after Laser Thermal Processing
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X-Ray Topographic Analysis of Misfit Dislocation Distribution in InGaAs and GeSi/Si Partially Relaxed Heterostructures
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Processing-Induced Defects in Epitaxially Grown p- and n-Type SiGe
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Quantitative Measurements of Vacancy Defects in High-Energy Ion-Implanted Si
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Positron Annihilation Studies of Vacancy Defects in Crystalline and Amorphous Si
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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 200-202Processing-Induced Defects in Epitaxially Grown p-...

Processing-Induced Defects in Epitaxially Grown p- and n-Type SiGe

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Defects and Diffusion in Semiconductors IV

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Periodical:

Defect and Diffusion Forum (Volumes 200-202)

Pages:

161-176

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.200-202.161

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Online since:

November 2001

Authors:

M. Mamor, F. Danie Auret, S.A. Goodman

Keywords:

Defect Engineering, DLTS, Electron Beam Metallization, Ion Etching, Particle Irradiation

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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