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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 200-202The Effect of Implant Temperature and...

The Effect of Implant Temperature and Pre-Annealing on Defect Formation after Laser Thermal Processing

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Defects and Diffusion in Semiconductors IV

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Periodical:

Defect and Diffusion Forum (Volumes 200-202)

Pages:

145-152

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.200-202.145

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Online since:

November 2001

Authors:

H.B. Banisaukas, Kevin S. Jones, S. Talwar, D.C. Jacobson

Keywords:

Ion Implantation, Laser Thermal Processing, Shallow Junctions, Silicon

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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