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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 200-202Positron Annihilation Studies of Vacancy Defects...

Positron Annihilation Studies of Vacancy Defects in Crystalline and Amorphous Si

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Defects and Diffusion in Semiconductors IV

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Periodical:

Defect and Diffusion Forum (Volumes 200-202)

Pages:

189-218

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.200-202.189

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Online since:

November 2001

Authors:

G. Amarendra

Keywords:

Amorphous, Lifetime, S-Parameter

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© 2002 Trans Tech Publications Ltd. All Rights Reserved

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