Migration of Ion Implanted Hydrogen in Amorphous and Polycrystalline Si3N4:H Films: Experiments and Numerical Simulations

Harald Schmidt; Günter Borchardt

doi:10.4028/www.scientific.net/DDF.237-240.566

Paper Titles

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Iron Self-Diffusion in Chemically Homogeneous Multilayers
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Interdiffusion in Co/Ta Multilayer Thin Films
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The Effect of Magnetic Field on Kinetics of Grain Boundary Grooving in Iron
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Migration of Ion Implanted Hydrogen in Amorphous and Polycrystalline Si₃N₄:H Films: Experiments and Numerical Simulations
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Application of the Spectroscopic Ellipsometry for the CoSi₂ Silicide Formation Induced by Thermal Annealing of Co/Si Multilayered Films
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Diffusion Impurity Drag of Twin Grain Boundaries and Triple Junctions Motion in Zinc
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Faceting of Ʃ3 Grain Boundaries in Cu: Three-Dimensional Wulff Diagrams
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Computer Simulation of Phase Decomposition in Magnetic Materials Based on the Phase-Field Method
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Migration of Ion Implanted Hydrogen in Amorphous and Polycrystalline Si₃N₄:H Films: Experiments and Numerical Simulations

Abstract:

The tracer diffusion of ion implanted deuterium is studied in amorphous and polycrystalline magnetron-sputtered Si3N4:H films with secondary ion mass spectrometry (SIMS). The experimentally obtained diffusion profiles are numerically simulated by computer calculations based on the concept of trap-limited diffusion where the tracer atoms form immobile complexes with: (a) intrinsic film defects like dangling bonds and (b) extrinsic defects caused by the implantation damage. For amorphous Si3N4:H films a moderately high dissociation rate of intrinsic complexes (dangling bonds) is present and time independent effective diffusivities are observed, which obey an Arrhenius law with an activation energy of DE = 3.4 eV and a pre-exponential factor of D0 = 4 x 10-4 m2/s. For polycrystalline Si3N4 films non-Gaussian depth profiles and strongly time dependent diffusivities are observed, which have their reason in the presence of intrinsic traps with negligible dissociation, presumably located at the grain boundaries.