Migration of Ion Implanted Hydrogen in Amorphous and Polycrystalline Si3N4:H Films: Experiments and Numerical Simulations

Abstract:

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The tracer diffusion of ion implanted deuterium is studied in amorphous and polycrystalline magnetron-sputtered Si3N4:H films with secondary ion mass spectrometry (SIMS). The experimentally obtained diffusion profiles are numerically simulated by computer calculations based on the concept of trap-limited diffusion where the tracer atoms form immobile complexes with: (a) intrinsic film defects like dangling bonds and (b) extrinsic defects caused by the implantation damage. For amorphous Si3N4:H films a moderately high dissociation rate of intrinsic complexes (dangling bonds) is present and time independent effective diffusivities are observed, which obey an Arrhenius law with an activation energy of DE = 3.4 eV and a pre-exponential factor of D0 = 4 x 10-4 m2/s. For polycrystalline Si3N4 films non-Gaussian depth profiles and strongly time dependent diffusivities are observed, which have their reason in the presence of intrinsic traps with negligible dissociation, presumably located at the grain boundaries.

Info:

Periodical:

Defect and Diffusion Forum (Volumes 237-240)

Edited by:

M. Danielewski, R. Filipek, R. Kozubski, W. Kucza, P. Zieba, Z. Zurek

Pages:

566-571

DOI:

10.4028/www.scientific.net/DDF.237-240.566

Citation:

H. Schmidt and G. Borchardt, "Migration of Ion Implanted Hydrogen in Amorphous and Polycrystalline Si3N4:H Films: Experiments and Numerical Simulations", Defect and Diffusion Forum, Vols. 237-240, pp. 566-571, 2005

Online since:

April 2005

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$35.00

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