Clustering of Arsenic Atoms in Silicon during Low-Temperature Annealing

Oleg Velichko; Olga Burunova

doi:10.4028/www.scientific.net/DDF.295-296.27

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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 295-296Clustering of Arsenic Atoms in Silicon during...

Clustering of Arsenic Atoms in Silicon during Low-Temperature Annealing

Abstract:

Simulation of arsenic clustering in Si at a temperature of 750 degrees Celsius has been carried out. It has been shown that considering the formation of singly or doubly negatively charged clusters that incorporate one or two arsenic atoms and point defects, one obtains a good fit to the measured values of electron density. It is supposed that we have the initial stage of clustering, when the concentration of complexes with one arsenic atom incorporated is high enough and the diffusion of these mobile particles provides for the formation of more stable clusters incorporating two arsenic atoms.

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Periodical:

Defect and Diffusion Forum (Volumes 295-296)

Pages:

27-32

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.295-296.27

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Online since:

January 2010

Authors:

Oleg Velichko, Olga Burunova

Keywords:

Annealing, Arsenic, Cluster, Doping Effect, Silicon

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References

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