Study of Conduction Mechanism in Amorphous Se85-xTe15Bix Thin Films

Abstract:

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Bulk samples of Se85-xTe15Bix (where x = 0, 1, 2, 3, 4, 5) glassy alloys are prepared by melt quenching technique. Thin films of the corresponding bulk samples are prepared by vacuum evaporation technique. I-V characteristics of Se85-xTe15Bix thin films are studied using Keithley 6487 picoammeter. Linear behavior of current has been observed at low voltage range and current is found to deviate from linearity i.e. tend towards non-Ohmic behavior in the higher voltage range. The value of resistance is also calculated in three different voltage ranges (0-90 V), (110-200 V) and (220-300 V) for the films under consideration. Maximum resistance has been observed for x = 1 and minimum resistance for x = 5. The conduction mechanism is discussed qualitatively and it is found to be of Poole Frenkel type for higher voltage range.

Info:

Periodical:

Defect and Diffusion Forum (Volumes 303-304)

Edited by:

David J. Fisher

Pages:

1-5

DOI:

10.4028/www.scientific.net/DDF.303-304.1

Citation:

A. Sharma and P.B. Barman, "Study of Conduction Mechanism in Amorphous Se85-xTe15Bix Thin Films", Defect and Diffusion Forum, Vols. 303-304, pp. 1-5, 2010

Online since:

July 2010

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Price:

$35.00

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