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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 319-320SIMS Study of 30keV H+ Ion-Implanted n-GaAs

SIMS Study of 30keV H⁺ Ion-Implanted n-GaAs

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Abstract:

A detailed analysis on the depth profiles of 30 keV H+ ion implanted n-GaAs for various doses from 1014 to 1017 cm-2 was carried by using Secondary ion mass spectrometry (SIMS), to identify the buried amorphous layer. The results are correlated with Raman and XRD strain parameter studies. Various thermal parameters are computed for the 30 keV H+ ion implanted n-GaAs and SIMS study reported for the first time.

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Defects and Diffusion in Metals XIII

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Periodical:

Defect and Diffusion Forum (Volumes 319-320)

Pages:

181-184

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.319-320.181

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Online since:

October 2011

Authors:

M. Sivabharathy, M. Jeyanthinath, Lasse Vines, Bengt Gunnar Svensson, K. Ramachandran

Keywords:

Ion Implantation, Strain Parameter, Thermal Diffusion

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© 2011 Trans Tech Publications Ltd. All Rights Reserved

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