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Capacitance-Voltage (C-V) Properties of ZnO:Al/p-Si Heterojunctions

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Abstract:

ZnO:Al/p-Si heterojunctions were fabricated by sol-gel dip coating technique onto p-type Si wafer substrates. Capacitance-Voltage (C-V) characteristics of ZnO:Al/p-Si heterojunctions were determined after the ZnO:Al thin film coated Si wafers were annealed at 700 and 800°C, respectively. C-V results indicate an abrupt interface.

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Diffusion in Solids and Liquids VIII View Preview

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Periodical:

Defect and Diffusion Forum (Volumes 334-335)

Pages:

349-352

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.334-335.349

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Online since:

February 2013

Authors:

Nilgun Baydogan, Y. Gokce, Murat Baydogan, H. Çimenoğlu

Keywords:

Capacitance-Voltage Characteristics, Sol-Gel, Zinc Oxide (ZnO)

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] F. Chaabouni, M. Abaab, B. Rezig: Superlattices and Microstructures 39 (2006), p.171–178.

DOI: 10.1016/j.spmi.2005.08.070

Google Scholar

[2] N. Baydogan, O. Karacasu, H. Cimenoglu: J Sol-Gel Sci Technol 61 (2012), p.620–627.

DOI: 10.1007/s10971-011-2668-4

Google Scholar

[3] N. Baydogan, O. Karacasu, H. Cimenoglu: Thin Solid Films Vol. 520 (2012), p.5790–5796.

DOI: 10.1016/j.tsf.2012.04.044

Google Scholar

[4] A. Khanna, S.S. Bhatti, K.J. Singh, K.S. Thind: Nucl. Instrum. Methods B 114 (1996), p.217.

Google Scholar

[5] K. Singh, H. Singh, V. Sharma, R. Nathuram, A. Khanna, R. Kumar, Surjit Singh Bhatti, H. Singh Sahot: Nucl. Instrum. Methods B 194 (2002) 1.

Google Scholar

[5] V.S. Veersamy, et. al.: IEEE Transactions on Electron Device, Vol. 42, No 4. (1995).

Google Scholar

[6] Y. Zhang: Applied Surface Science 252 (2006) pp.3449-3453.

Google Scholar

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