Enhanced Optical Properties of Silicon Based Quantum Dot Heterostructures

Abstract:

New approaches to enhance properties of silicon based quantum dot heterostructures for optical device application were developed. That is strain driven heteroepitaxy, small-sized quantum dots, elemental compositions of the heterointerface, virtual substrate, plasmonic effects, and the quantum dot charging occupation with holes in epitaxially grown Ge quantum dots (QDs) on Si (100). Experiments have shown extraordinary optical properties of Ge/Si QDs heterostructures and mid-infrared quantum dot photodetectors performance.

• Periodical: Defect and Diffusion Forum (Volume 386)
• Pages: 68-74
• DOI: https://doi.org/10.4028/www.scientific.net/DDF.386.68
• Online since: September 2018
• Authors: Anatoliy Vasilevich Dvurechenskii, Andrew Yakimov, Victor Kirienko, Alekcei Bloshkin, Vladimir Zinovyev, Aigul Zinovieva, Alexander Mudryi
• Keywords: Ge, Infrared Photodetector, Luminescence, Polariton, Quantum Dot, Si, Surface Plasmon

References

[1] O.G. Schmidt, U. Denker, K. Eberl, O. Kienzle, F. Ernst, Effect of overgrowth temperature on the photoluminescence of Ge/Si islands. Appl. Phys. Lett. 77 (2000) 2509-2511.

DOI: 10.1063/1.1318729

[2] D. Grützmacher, T. Fromherz, C. Dais, J. Stangl, E. Müller, Y. Ekinci, H.H. Solak, H. Sigg, R.T. Lechner, E. Wintersberger, S. Birner, V. Holý, G. Bauer, Three-dimensional Si/Ge quantum dot crystals. Nano Lett. 7 (2007) 3150–3156.

DOI: 10.1021/nl0717199

[3] R.O. Rezaev, S. Kiravittaya, V.M. Fomin, A. Rastelli, O.G. Schmidt, Engineering self-assembled SiGe islands for robust electron confinement in Si, Phys. Rev. B. 82 (2010) 153306–4.

DOI: 10.1103/physrevb.82.153306

[5] A.V. Dvurechenskii, A.I. Yakimov, Silicon-Based Nanoheterostructures with Quantum Dots, in: A.V. Latyshev, A.V. Dvurechenski, A.L. Aseev (Eds.), Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Elsevier, Amsterdam. 2017. pp.59-99.

DOI: 10.1016/b978-0-12-810512-2.00004-4

[5] A.F. Zinovieva, A.I. Nikiforov, V.A. Timofeev, A.V. Nenashev, A.V. Dvurechensii, L.V. Kulik, Electron localization in Ge/Si heterostructures with double quantum dots detected by an electron spin resonance method, Phys. Rev. B. 88 (2013) 235308-8.

DOI: 10.1103/physrevb.88.235308

[6] V.A. Zinovyev, A.F. Zinovieva, P.A. Kuchinskaya, Zh.V. Smagina, V.A. Armbrister, A.V. Dvurechenskii, O.M. Borodavchenko, V.D. Zhivulko, and A.V. Mudryi, Strain-induced improvement of photoluminescence from the groups of laterally ordered SiGe quantum dots. Appl. Phys. Lett. 110 (2017).

DOI: 10.1063/1.4977944

[7] V. Ryzhii, I. Khmyrova, V. Pipa, V. Mitin, and M. Willander, Device model for quantum dot infrared photodetectors and their dark-current characteristics. Semicond. Sci. Technol. 16 (2001) 331-338.

DOI: 10.1088/0268-1242/16/5/309

[8] A.V. Yakimov, V.V. Kirienko, V.A. Armbrister, A.A. Bloshkin, A.V. Dvurechenskii, and A.A. Shklyaev, Photoconductive gain and quantum efficiency of remotely doped Ge/Si quantum dot photodetectors. Mater. Res. Express. 3 (2016) 105032–8.

DOI: 10.1088/2053-1591/3/10/105032

[9] A.V. Barve, S. Krishna, Photovoltaic quantum dot quantum cascade infrared photodetector. Appl. Phys. Lett., 100 (2012) 021105-4.

DOI: 10.1063/1.3675905

[10] A.I. Yakimov, V.V. Kirienko, A.A. Bloshkin, V.A. Armbrister, A.V. Dvurechenskii, and J.-M. Hartmann, Photovoltaic Ge/SiGe quantum dot mid-infrared photodetector enhanced by surface plasmon. Optics Express, 25 (2017) 25602–25611.

DOI: 10.1364/oe.25.025602

[11] A. I. Yakimov, V. V. Kirienko, A. A. Bloshkin, V. A. Armbrister,and A. V. Dvurechenskii. Plasmon polariton enhanced mid-infrared photodetectors based on Ge quantum dots in Si. J. Appl. Phys., 122 (2017) 133101-7.

DOI: 10.1063/1.4986986