Preface
Implementation of Large Scale Deep Learning Non-Destructive Methods for Characterizing 4H-SiC Materials
p.3
p.3
Correlation of Extended Defects with Electrical Yield of SiC MOSFET Devices
p.11
p.11
Strain-Dependent Photoluminescence Line Shifts of the TS Color Center in 4H-SiС
p.17
p.17
Minority Carrier Traps Induced by Neutron Reactions with 4H-SiC
p.23
p.23
Stacking Faults Originating from Star-Defects in 4H-SiC
p.29
p.29
P-Type Impurities in 4H-SiC Calculated Using Density Functional Theory
p.35
p.35
The Optical Properties of the Carbon Di-Vacancy-Antisite Complex in the Light of the TS Photoluminescence Center
p.43
p.43
Analysis of Strain in Ion Implanted 4H-SiC by Fringes Observed in Synchrotron X-Ray Topography
p.51
p.51
Preface
Abstract:
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Info:
Periodical:
Defect and Diffusion Forum (Volume 426)
Online since:
June 2023
Сopyright:
© 2023 Trans Tech Publications Ltd. All Rights Reserved
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