Preface
Implementation of Large Scale Deep Learning Non-Destructive Methods for Characterizing 4H-SiC Materials
p.3
p.3
Correlation of Extended Defects with Electrical Yield of SiC MOSFET Devices
p.11
p.11
Strain-Dependent Photoluminescence Line Shifts of the TS Color Center in 4H-SiС
p.17
p.17
Minority Carrier Traps Induced by Neutron Reactions with 4H-SiC
p.23
p.23
Stacking Faults Originating from Star-Defects in 4H-SiC
p.29
p.29
P-Type Impurities in 4H-SiC Calculated Using Density Functional Theory
p.35
p.35
The Optical Properties of the Carbon Di-Vacancy-Antisite Complex in the Light of the TS Photoluminescence Center
p.43
p.43
Analysis of Strain in Ion Implanted 4H-SiC by Fringes Observed in Synchrotron X-Ray Topography
p.51
p.51
Strain-Dependent Photoluminescence Line Shifts of the TS Color Center in 4H-SiС
Abstract:
We present a detailed study of the behavior of the photoluminescence (PL) of the TS color center in 4H-SiC under controlled mechanical strain. We have investigated the TS1 line under varying strain, including its reaction to compression and tension. We use emission polarization measurements to gain access to the orientation of the underlying defects. We put our results in context with previous findings and find good agreement, corroborating the proposed microscopic model.
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Periodical:
Defect and Diffusion Forum (Volume 426)
Pages:
17-21
Citation:
Online since:
June 2023
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