Preface
Evaluation of Basal Plane Dislocation Behavior near Epilayer and Substrate Interface
p.1
p.1
Body Diode Reliability of 4H-SiC MOSFETs as a Function of Epitaxial Process Parameter
p.7
p.7
Accuracy of EVC Method for the PiN Diode Pattern on SiC Epi-Wafer
p.15
p.15
Study on Quantification of Correlation between Current Density and UV Irradiation Intensity, Leading to Bar Shaped 1SSF Expansion
p.23
p.23
Early Detection of Bar-Shaped 1SSF before Expansion by PL Imaging
p.33
p.33
Analysis of Forward Bias Degradation Reduction in 4H-SiC PiN Diodes on Bonded Substrates
p.39
p.39
Investigation of Dislocation Behaviors in 4H-SiC Substrate during Post-Growth Thermal Treatment
p.45
p.45
The Role of Defects on SiC Device Performance and Ways to Mitigate them
p.51
p.51
Preface
Abstract:
You might also be interested in these eBooks
Info:
Periodical:
Defect and Diffusion Forum (Volume 434)
Online since:
August 2024
Сopyright:
© 2024 Trans Tech Publications Ltd. All Rights Reserved
Share: