Defect and Diffusion Forum

ISSN: 1662-9507

Main Themes

Volumes
Edited by: Dr. D.J. Fisher
Online since: May 2004
Description: This sixth volume in the series covering the latest results in the field includes abstracts of papers which appeared between the publication of Annual Retrospective V (Volumes 218-220) and the end of April 2004 (journal availability permitting).

226-228

Edited by: David Fisher
Online since: December 2003
Description: This sixth volume in the series covering the latest results in the field includes abstracts of papers which appeared between the publication of Annual Retrospective V (Volumes 213-215) and the end of October 2003.

224-225

Edited by: D.J. Fisher
Online since: November 2003
Description: This volume of the annual series contains nearly 800 selected abstracts of recent research in the semiconductor field: dating up to about September 2003 (depending upon individual source publication dates).

221-223

Edited by: D.J. Fisher
Online since: August 2003
Description: This latest volume of the annual series contains over 900 selected abstracts of research in the field of ceramics (including, for this purpose, allotropes of carbon); reported between the appearance of Retrospective IV and about June 2003 (allowing for variations in publication dates).

218-220

Edited by: B.S. Bokstein and B.B. Straumal
Online since: February 2003
Description: This volume contains the proceedings of the conference, 'Diffusion, Segregation and Stresses in Materials (DSS-02)', which was held at the Moscow State Institute of Steel and Alloys, Moscow, Russia. The participants, all acknowledged experts in their field, were drawn from 15 countries and interchanged their expertise via 90 scheduled lectures, plus poster sessions and many informal discussions.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

216-217

Edited by: D.J. Fisher
Online since: March 2003
Description: This issue covers, in the form of abstracts, the work which has been reported between the previous retrospective and the end of 2002. The choice of abstracted papers is guided by criteria such as accessibility, data content and description of important new techniques, phenomena or anomalies. There is also a thorough coverage of qualitative features of diffusion and defect phenomena, computer modelling and theory. The volume also includes invited review and experimental papers which treat a wide range of topics in the field.

213-215

Edited by: D.J. Fisher
Online since: November 2002
Description: This fifth volume in the series covering the latest results in the field includes abstracts of papers which appeared within the approximate period of mid-2001 to mid-2002. The scope of this coverage again includes, in addition to traditional semiconductors, the increasingly important carbide, nitride and silicide semiconductors. Semiconducting oxides are not covered, as information on these can be found in the "Defects and Diffusion in Ceramics" series. However, the invited papers this time deal exclusively with staple semiconducting materials: including work on interstitial clusters, intrinsic point defects, and {113} defects in silicon; defect states in InAs quantum dots and defect generation at ZnSe/GaAs interfaces. There are also papers treating a wide range of general themes: such as tracer diffusion in a concentrated lattice gas, defect luminescence in layered chalcogenide semiconductors, defect formation after laser thermal processing, redistribution of point defects in an inhomogeneous temperature field, and very general mathematical techniques for determining basic diffusion parameters.

210-212

Edited by: W. Lojkowski
Online since: May 2002
Description: The aim of the celebrated High Pressure School (HPS) is to provide a platform where both young and experienced researchers can meet and exchange their experiences in high-pressure research and techniques. Since 1996, four schools have been held in Warsaw and the tradition has developed of combining the topic of high pressure techniques with workshops which are related to the rapidly developing fields of high pressure science and technology: chemistry, biology and materials science; with particular attention being paid to nanostructured materials.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

208-209

Edited by: D.J. Fisher
Online since: July 2002
Description: In addition to the usual abstracts of research reported since the previous retrospective, this issue comprises ten invited papers. The first four are reviews that cover the important topics of conductive oxide preparation, the modeling of amorphous materials (silicon carbide, for example), the nanoscale characterization of oxides and the effect of combined irradiation treatments.
The other six invited papers present recent experimental or theoretical studies of structural defects in gallium nitride, atomic-scale deformation processes in nanomaterials, micropipes in silicon carbide, radiation effects in garnets and boron diffusion in hafnia.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

206-207

Edited by: D.J. Fisher
Online since: February 2002
Description: This issue covers, in the form of abstracts, the work which has been reported between the previous retrospective and the end of 2001. The choice of abstracts is guided by criteria such as accessibility, data content and description of important new techniques, phenomena or anomalies. But there is also a thorough coverage of more qualitative features of diffusion and defect phenomena, computer modelling and theory. The volume also includes, as usual, a number of invited review and experimental papers which treat a wide range of topics in the field.
The more theoretical review papers presented here cover the modelling of intergranular segregation and diffusion in alloys, as well as the impact of electron theory. The more practical aspects of diffusion are described by reviews concerning interdiffusion in coatings and long-term thermomechanical behaviour.

203-205

Showing 101 to 110 of 233 Main Themes