Description: The third annual retrospective of the latest results in the field of defects and diffusion in semiconductors covers the period from mid-1999 to mid-2000. As usual, the coverage also includes, in addition to 'traditional' semiconductors, the more important of the nitride and silicide semiconductors.
Description: Halides continue to be an increasingly important industrial engineering resource: as electrolytes, and in heat-treatment baths on the one hand, and as the basis of exotic devices in the fields of optics, electronics, etc., on the other. At both of these extremes, the gross or detailed movements of ions, respectively, are important factors. There may also be an important geological need for a knowledge of halide diffusion data, in an era when the migration – or not - of various waste materials, including nuclear, through natural seams of halide-based minerals is of great concern.
Description: “Dislocation Theory” covers the research into this fascinating field which was reported in the period: 1995-1999. The coverage is limited to purely theoretical work; more practical aspects having certainly been covered by the relevant DDF volumes during that period. As indicated above, the widest possible range of dislocation phenomena has been included; with the exception of liquid crystal defects. But the coverage also includes that close relative of the dislocation; the disclination.
Description: This is the second issue, following DDF164, to cover recent progress in this field. The contents are contiguous with those of DDF164, and extend to late November or December 1999 (depending upon journal publication dates). As usual, priority in abstracting has been given to the most accessible work and, in particular, to those papers which furnish original data or report important new techniques, phenomena or anomalies, although there is also extensive coverage of more qualitative features of diffusion and defect phenomena, and of the predictions of computer models.
Description: This is the second issue, following DDF165-166, to cover recent progress in this field. As usual, priority in abstracting has been given to the most accessible work and, in particular, to those papers which furnish original data or report important new techniques, phenomena or anomalies, although there is also extensive overage of more qualitative features of diffusion and defect phenomena, of the predictions of computer models, and of theoretical studies.
Description: This group of materials tends to be relatively neglected, with regard to defect and diffusion studies, when compared with the other major semiconductor groups such as the elementals (Si, Ge) and the III-V compounds (especially GaAs). This is reflected by the fact that the volume of diffusion data is smaller than that for the other groups (see DDF volumes 153-155 on Si and volumes 157-159 on GaAs). Nevertheless MCT (HgCdTe), here classified as part of the (Cd,Hg)Te system, continues to be of great interest and this is reflected by the contents of this volume. In particular, the first of the original works in this book reviews the topic of diffusion in MCT.
Description: This second volume in the new-format coverage of the latest results in the field covers abstracts from the approximate period of mid-1998 to mid-1999. As always, due to the vagaries of some journal publication dates, abstracts of earlier work may be included in order that the present contents merge seamlessly with those of volumes 162-163; the previous issue in this sub-series.
Description: Although this volume is ostensibly devoted to diffusion per se, it also covers ionic conduction because this phenomenon, in the often complex and charge-sensitive structures of many ceramics, usually gives important clues as to the routes taken by all migrating species.
The definition of what constitutes a ceramic is also liberally interpreted here so as to include substances which are not normally used as such in the industrial sense. One obvious anomaly is the class of so-called room-temperature superconductors which, perversely, are expected to be used at the opposite end of the temperature scale to traditional ceramic applications. The coverage of research on oxides, carbides and nitrides herein is believed to be as complete as possible, while other possible candidates for inclusion are not necessarily to be found in the 'miscellaneous' section. Silicides, in particular, are notable by their absence.
Description: The present work draws upon Diffusion and Defect Forum's 30-year project of summarizing recent progress in the fields of diffusion and defect research, by collating the relevant data which have been published during that time. The large number of studies of iron alloys reflects the great commercial importance of hydrogen embrittlement; an annoying phenomenon which has long plagued steel fabricators.
Description: This work, like others in the series (Defects and Diffusion inSemiconductors and Defects and Diffusion in Ceramics), continues a 30-year program which has the aim of succinctly summarizing progress in the fields of diffusion and defect research.