Defect and Diffusion Forum

ISSN: 1662-9507

Main Themes

Volumes
Edited by: D.J. Fisher
Online since: January 2000
Description: This is the second issue, following DDF165-166, to cover recent progress in this field. As usual, priority in abstracting has been given to the most accessible work and, in particular, to those papers which furnish original data or report important new techniques, phenomena or anomalies, although there is also extensive overage of more qualitative features of diffusion and defect phenomena, of the predictions of computer models, and of theoretical studies.

175-176

Edited by: D.J. Fisher
Online since: August 1999
Description: This group of materials tends to be relatively neglected, with regard to defect and diffusion studies, when compared with the other major semiconductor groups such as the elementals (Si, Ge) and the III-V compounds (especially GaAs). This is reflected by the fact that the volume of diffusion data is smaller than that for the other groups (see DDF volumes 153-155 on Si and volumes 157-159 on GaAs). Nevertheless MCT (HgCdTe), here classified as part of the (Cd,Hg)Te system, continues to be of great interest and this is reflected by the contents of this volume. In particular, the first of the original works in this book reviews the topic of diffusion in MCT.

173-174

Edited by: D.J. Fisher
Online since: June 1999
Description: This second volume in the new-format coverage of the latest results in the field covers abstracts from the approximate period of mid-1998 to mid-1999. As always, due to the vagaries of some journal publication dates, abstracts of earlier work may be included in order that the present contents merge seamlessly with those of volumes 162-163; the previous issue in this sub-series.

171-172

Edited by: D.J. Fisher
Online since: May 1999
Description: Although this volume is ostensibly devoted to diffusion per se, it also covers ionic conduction because this phenomenon, in the often complex and charge-sensitive structures of many ceramics, usually gives important clues as to the routes taken by all migrating species.

The definition of what constitutes a ceramic is also liberally interpreted here so as to include substances which are not normally used as such in the industrial sense. One obvious anomaly is the class of so-called room-temperature superconductors which, perversely, are expected to be used at the opposite end of the temperature scale to traditional ceramic applications. The coverage of research on oxides, carbides and nitrides herein is believed to be as complete as possible, while other possible candidates for inclusion are not necessarily to be found in the 'miscellaneous' section. Silicides, in particular, are notable by their absence.

169-170

Edited by: D.J. Fisher
Online since: March 1999
Description: The present work draws upon Diffusion and Defect Forum's 30-year project of summarizing recent progress in the fields of diffusion and defect research, by collating the relevant data which have been published during that time. The large number of studies of iron alloys reflects the great commercial importance of hydrogen embrittlement; an annoying phenomenon which has long plagued steel fabricators.

167-168

Edited by: D.J. Fisher
Online since: December 1998
Description: This work, like others in the series (Defects and Diffusion inSemiconductors and Defects and Diffusion in Ceramics), continues a 30-year program which has the aim of succinctly summarizing progress in the fields of diffusion and defect research.

165-166

Edited by: D.J. Fisher
Online since: September 1998
Description: Ceramics were arguably the first materials ever synthesized by Man, and they continue to be an invaluable and ever-developing resource. One newly expanding field, for instance, is that of the semiconducting ceramic and its unique high-temperature electronic properties; as reported by the sister-publication to the present one: Defects and Diffusion in Semiconductors - an Annual Retrospective (DDF162-163).

The present volume covers ceramics in general, and succinctly summarises recent progress made in the field. This book series is a spin-off and continuation of the 30-year long efforts of the journal, Diffusion and Defect Forum, in keeping the busy researcher up-to-date with the latest data and theoretical trends. A similar issue will appear each year and thereby ensure the continuous monitoring of recent progress; the present volume details those papers published during the approximate period from June 1997 to August 1998. The usually accepted definition of 'ceramic' has been widened slightly herein so as to include, as well as carbides, allotropic forms of carbon and new materials such as fullerenes. In general, priority of coverage is given to the most accessible work and, in particular, to those papers which furnish original data or report important new techniques, phenomena or anomalies. Lower priority has been given to reviews and to entirely theoretical work.

164

Edited by: D.J. Fisher
Online since: July 1998
Description: This issue, and the ones which will follow year-by-year, can be regarded not only as supplements to the recent special 10-year retrospective volumes on Diffusion in Silicon (volumes 153-155) and Diffusion in III-V Compounds (volumes 157-159), but also as a return to the 'regular business' of Diffusion and Defect Forum's 30-year project of succinctly summarising recent progress in these fields.

The present volume abstracts those papers published during the approximate period from June 1997 to June 1998. Earlier papers have been included in order to make sure that the coverage is contiguous with volume 152 of Defect and Diffusion Forum; the most recent 'regular' issue. Due to vagaries in publication schedules, the 1998 cut-off point is not exact, but any omissions will be corrected in the next annual retrospective. General priority has been given to the most accessible work and, in particular, to those papers which furnish original data or report important new techniques, phenomena or anomalies. Lesser priority has been given to reviews and to entirely theoretical work.

162-163

Edited by: D.J. Fisher
Online since: May 1998
Description: Surface Diffusion and Surface Structure - Ten Years of Research The topic of surface diffusion continues to increase in importance, not only because of its practical importance in fields as diverse as catalysis and crystal growth/solidification, but also because this is a case in which fundamental diffusion processes can be monitored in extreme detail; even to the point of following a single migrating atom.

160-161

Edited by: D.J. Fisher
Online since: March 1998
Description: The inherently superior electron ballistic properties of GaAs, as compared with those of Si, have generated an ever-increasing pace of research on this semiconductor; thus making this volume a timely source of information.

157-159

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