Defect and Diffusion Forum

ISSN: 1662-9507

Main Themes

Edited by: D.J. Fisher
Online since: February 2002
Description: This issue covers, in the form of abstracts, the work which has been reported between the previous retrospective and the end of 2001. The choice of abstracts is guided by criteria such as accessibility, data content and description of important new techniques, phenomena or anomalies. But there is also a thorough coverage of more qualitative features of diffusion and defect phenomena, computer modelling and theory. The volume also includes, as usual, a number of invited review and experimental papers which treat a wide range of topics in the field.
The more theoretical review papers presented here cover the modelling of intergranular segregation and diffusion in alloys, as well as the impact of electron theory. The more practical aspects of diffusion are described by reviews concerning interdiffusion in coatings and long-term thermomechanical behaviour.


Edited by: D.J. Fisher
Online since: November 2001
Description: This fourth volume in the series covering the latest results in the field includes abstracts of papers which appeared within the approximate period of mid-2000 to mid-2001. The scope of this coverage includes, in addition to traditional semiconductors, the increasingly important carbide, nitride and silicide semiconductors. Semiconducting oxides are not covered, as information on these can be found in the "Defects and Diffusion in Ceramics Retrospective" series. The increasing interest in ceramic-type semiconductors is again reflected by the invited papers, which include an extensive review of the particular problems involved in growing GaN films on sapphire substrates. Nevertheless, established semiconductors continue to spring surprises and to offer new problems and these are also addressed here by a number of further detailed reviews of work on Si, InP and InGaP. Finally, new results are to be found here concerning diffusive processes and defect behaviour in Ge, GeSi, InGaAs, Si and ZnSe. Altogether, these 8 long reviews, 9 research papers and 752 selected abstracts provide an invaluable and up-to-date insight into current and future trends in semiconductor theory, processing and applications.


Edited by: Y. Limoge and J.L. Bocquet
Online since: April 2001
Description: This book covers, on close to 2000 pages, all aspects of basic and applied diffusion research in all important engineering materials, including metals and intermetallics, elemental and compound semiconductors, amorphous and nanocrystalline materials and oxides.
Volume is indexed by Thomson Reuters CPCI-S (WoS)


Edited by: D.J. Fisher
Online since: August 2001
Description: This phenomenon (also known as the Compensation Effect) can occur in any situation which involves an activated process. However, the rule is still most commonly referred to in connection with diffusion phenomena. As the rule still tends to exist in a sort of limbo between fully accepted physical law and unexplained correlation, this volume presents a handy survey of relevant diffusion data reaching back as far as the 1930s.


Edited by: R.P. Agarwala
Online since: January 2001
Description: Recent advances in solid-state chemistry have resulted in substantial progress towards achieving a better understanding of the solid state, and have even led to the development of new predictive capabilities in crystal chemistry. Entirely new ways of studying and preparing advanced materials have been the result of pursuing the so-called "soft chemistry" approach to materials science.


Edited by: D.J. Fisher
Online since: January 2001
Description: This latest annual look back at the subject includes review papers on some applications of mechanical spectroscopy and magnetic relaxation to the monitoring of diffusion, on the effect of positron diffusion upon their annihilation, on the wind force in electromigration, on the creep of nanocrystalline metals (as related to grain-boundary diffusion) and on self-interstitial atom behaviour at high temperatures in dense metals.


Edited by: D.J. Fisher
Online since: December 2000
Description: This is the third special issue to cover recent progress in the field. As usual, priority in abstracting has been given to the most accessible work and, in particular, to those papers which furnish original data or report important new techniques, phenomena or anomalies; although there is also extensive coverage of more qualitative features of diffusion and defect phenomena, of the predictions of computer models, and of theoretical studies. As before, the usual definition of ‘ceramic’ has been widened so as to include all forms of carbon, and also some nitrides whose primary use is not that of a classical ceramic.


Edited by: D.J. Fisher
Online since: August 2000
Description: The third annual retrospective of the latest results in the field of defects and diffusion in semiconductors covers the period from mid-1999 to mid-2000. As usual, the coverage also includes, in addition to 'traditional' semiconductors, the more important of the nitride and silicide semiconductors.


Edited by: D.J. Fisher
Online since: May 2000
Description: Halides continue to be an increasingly important industrial engineering resource: as electrolytes, and in heat-treatment baths on the one hand, and as the basis of exotic devices in the fields of optics, electronics, etc., on the other. At both of these extremes, the gross or detailed movements of ions, respectively, are important factors. There may also be an important geological need for a knowledge of halide diffusion data, in an era when the migration – or not - of various waste materials, including nuclear, through natural seams of halide-based minerals is of great concern.


Edited by: D.J. Fisher
Online since: February 2000
Description: “Dislocation Theory” covers the research into this fascinating field which was reported in the period: 1995-1999. The coverage is limited to purely theoretical work; more practical aspects having certainly been covered by the relevant DDF volumes during that period. As indicated above, the widest possible range of dislocation phenomena has been included; with the exception of liquid crystal defects. But the coverage also includes that close relative of the dislocation; the disclination.


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