Defect and Diffusion Forum

Description: This tenth volume in the series covering the latest results in the field includes abstracts of papers which appeared between the publication of Annual Retrospective IX (Volume 265) and the end of May 2008 (journal availability permitting). As well as the 452 metals abstracts, the issue includes – in line with the new editorial policy of including original papers on all of the major material groups: “Defect Investigation of Plastically Deformed Al 5454 Wrought Alloy Using PADBS and Electrical Measurements” (Abdel-Rahman, Kamel, Lotfy, Badawi and Abdel-Rahman), “Activation Enthalpy of Dislocation Migration in Aircraft (Aerospace) (2024) Alloy by Positron Spectroscopy” (Abdel-Rahman, Abdallah, Hassan and Badawi), “Effect of Irradiation Dose on AlCu6.5 Alloy using Positron Annihilation Doppler Broadening Technique” (Abdel-Rahman, Lotfy, Abdel-Rahman and Badawi), “Dependence of Mono-Vacancy Formation Energy on the Parameter of Ashcroft's Potential” (Ghorai), “X-Ray Characterization of Ag Impurities in Na1-xAgxCl” (Hazeen, Syed Ali, Prema Rani and Saravanan), “Self-Organization Behavior of Sub-Micron CdO Grains Grown during Vapour-Solid Transition” (Zhang, Wang and Li), “Studies of the Local Structure and the Spin Hamiltonian Parameters for Co2+ in CaTiO3” (Lu, Wu, Zhang and Wei).

Description: Diffusion-controlled processes still remain the most important and interesting phenomena in materials science. Among the problems which are currently to the fore, are the synergy of diffusion and morphological evolution, the initial stages of solid-state reactions, the analysis of nano- materials and related phenomena, thermo- and electromigration, and the reliability of solder joints and interconnects in microelectronic devices. A number of challenging problems still remain within the “classical” areas of nucleation, reactive- and inter-diffusion, phase growth in multicomponent and binary systems, and decomposition and ripening.
Volume is indexed by Thomson Reuters CPCI-S (WoS)

Description: This special issue contains selected peer-reviewed papers which were presented at the Third International Conference on Diffusion in Solids and Liquids (DSL-2007), held at the Hotel Pestana Alvor Praia, Algarve, Portugal during the 4th-6th July, 2007.

Description: Defect and Diffusion Forum Vol. 272

Description: This special issue collects together relevant data spanning the quarter-century from 1982 to 2007. It comprises 936 entries, 220 tables and 44 figures. Wherever possible, the data are presented as Arrhenius expressions, giving a total of 304. The materials covered number 410 in all and include oxides based upon aluminium, barium, bismuth, boron, caesium, calcium, cerium, chromium, cobalt, copper, erbium, gadolinium, gallium, germanium, indium, iridium, iron, lanthanum, lead, lithium, magnesium, manganese, mercury, molybdenum, neodymium, nickel, niobium, phosphorus, plutonium, potassium, praseodymium, ruthenium, samarium, scandium, silicon, sodium, strontium, tantalum, tellurium, terbium, thorium, tin, titanium, tungsten, uranium, vanadium, ytterbium, yttrium, zinc and zirconium, plus their many compounds and solid solutions. Altogether, this volume provides a wealth of information on the topic.

Description: Defect and Diffusion Forum Vol. 268

Description: This system, consisting of compositions lying between the end-members, CdTe and HgTe, constitutes perhaps the third most important semiconductor after Si and GaAs. Its importance stems from the ability to tailor the band-gap precisely between that (1.5eV) of the semiconductor, CdTe, and the zero value of the semi-metal, HgTe; giving, in particular, one of the most versatile infra-red detectors known. The intermediate compositions also benefit from the usual mechanisms which improve the mechanical properties of alloys.

Description: The continued development of advanced materials and processes requires an intimate understanding of diffusion mechanisms, and having the ability to model the diffusion-controlled phenomena which occur within materials during processing.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: Defect and Diffusion Forum Vol. 265

Description: The question of the interrelationship between diffusion and stress is almost as old as the investigation of diffusion itself. Nowadays, the study of various diffusion and solid-state reaction processes in thin films and multilayers is a vital area of research activity in which, inevitably, diffusion-induced or thermal stresses are of primary importance.
Volume is indexed by Thomson Reuters CPCI-S (WoS).