Defect and Diffusion Forum

Description: This seventh volume in the series covering the latest results in the field includes abstracts of papers which appeared between the publication of Annual Retrospective VI (Volumes 221-223) and the end of September 2004 (allowing for vagaries of journal availability).

Description: This seven-year retrospective covers the significant results, reported in these fields during that time, and includes abstracts of papers which appeared after the publication of Defect and Diffusion Forum, Volumes 150-151 and Volumes 181-182, (which were last to cover these topics systematically) and the end of August 2004 (allowing for vagaries of journal availability).

Description: This sixth volume in the series covering the latest results in the field includes abstracts of papers which appeared between the publication of Annual Retrospective V (Volumes 218-220) and the end of April 2004 (journal availability permitting).

Description: This sixth volume in the series covering the latest results in the field includes abstracts of papers which appeared between the publication of Annual Retrospective V (Volumes 213-215) and the end of October 2003.

Description: This volume of the annual series contains nearly 800 selected abstracts of recent research in the semiconductor field: dating up to about September 2003 (depending upon individual source publication dates).

Description: This latest volume of the annual series contains over 900 selected abstracts of research in the field of ceramics (including, for this purpose, allotropes of carbon); reported between the appearance of Retrospective IV and about June 2003 (allowing for variations in publication dates).

Description: This volume contains the proceedings of the conference, 'Diffusion, Segregation and Stresses in Materials (DSS-02)', which was held at the Moscow State Institute of Steel and Alloys, Moscow, Russia. The participants, all acknowledged experts in their field, were drawn from 15 countries and interchanged their expertise via 90 scheduled lectures, plus poster sessions and many informal discussions.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: This issue covers, in the form of abstracts, the work which has been reported between the previous retrospective and the end of 2002. The choice of abstracted papers is guided by criteria such as accessibility, data content and description of important new techniques, phenomena or anomalies. There is also a thorough coverage of qualitative features of diffusion and defect phenomena, computer modelling and theory. The volume also includes invited review and experimental papers which treat a wide range of topics in the field.

Description: This fifth volume in the series covering the latest results in the field includes abstracts of papers which appeared within the approximate period of mid-2001 to mid-2002. The scope of this coverage again includes, in addition to traditional semiconductors, the increasingly important carbide, nitride and silicide semiconductors. Semiconducting oxides are not covered, as information on these can be found in the "Defects and Diffusion in Ceramics" series. However, the invited papers this time deal exclusively with staple semiconducting materials: including work on interstitial clusters, intrinsic point defects, and {113} defects in silicon; defect states in InAs quantum dots and defect generation at ZnSe/GaAs interfaces. There are also papers treating a wide range of general themes: such as tracer diffusion in a concentrated lattice gas, defect luminescence in layered chalcogenide semiconductors, defect formation after laser thermal processing, redistribution of point defects in an inhomogeneous temperature field, and very general mathematical techniques for determining basic diffusion parameters.

Description: The aim of the celebrated High Pressure School (HPS) is to provide a platform where both young and experienced researchers can meet and exchange their experiences in high-pressure research and techniques. Since 1996, four schools have been held in Warsaw and the tradition has developed of combining the topic of high pressure techniques with workshops which are related to the rapidly developing fields of high pressure science and technology: chemistry, biology and materials science; with particular attention being paid to nanostructured materials.
Volume is indexed by Thomson Reuters CPCI-S (WoS).