Defect and Diffusion Forum

Description: This fifth volume in the series covering the latest results in the field includes abstracts of papers which appeared within the approximate period of mid-2001 to mid-2002. The scope of this coverage again includes, in addition to traditional semiconductors, the increasingly important carbide, nitride and silicide semiconductors. Semiconducting oxides are not covered, as information on these can be found in the "Defects and Diffusion in Ceramics" series. However, the invited papers this time deal exclusively with staple semiconducting materials: including work on interstitial clusters, intrinsic point defects, and {113} defects in silicon; defect states in InAs quantum dots and defect generation at ZnSe/GaAs interfaces. There are also papers treating a wide range of general themes: such as tracer diffusion in a concentrated lattice gas, defect luminescence in layered chalcogenide semiconductors, defect formation after laser thermal processing, redistribution of point defects in an inhomogeneous temperature field, and very general mathematical techniques for determining basic diffusion parameters.

Description: The aim of the celebrated High Pressure School (HPS) is to provide a platform where both young and experienced researchers can meet and exchange their experiences in high-pressure research and techniques. Since 1996, four schools have been held in Warsaw and the tradition has developed of combining the topic of high pressure techniques with workshops which are related to the rapidly developing fields of high pressure science and technology: chemistry, biology and materials science; with particular attention being paid to nanostructured materials.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: In addition to the usual abstracts of research reported since the previous retrospective, this issue comprises ten invited papers. The first four are reviews that cover the important topics of conductive oxide preparation, the modeling of amorphous materials (silicon carbide, for example), the nanoscale characterization of oxides and the effect of combined irradiation treatments.
The other six invited papers present recent experimental or theoretical studies of structural defects in gallium nitride, atomic-scale deformation processes in nanomaterials, micropipes in silicon carbide, radiation effects in garnets and boron diffusion in hafnia.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: This issue covers, in the form of abstracts, the work which has been reported between the previous retrospective and the end of 2001. The choice of abstracts is guided by criteria such as accessibility, data content and description of important new techniques, phenomena or anomalies. But there is also a thorough coverage of more qualitative features of diffusion and defect phenomena, computer modelling and theory. The volume also includes, as usual, a number of invited review and experimental papers which treat a wide range of topics in the field.
The more theoretical review papers presented here cover the modelling of intergranular segregation and diffusion in alloys, as well as the impact of electron theory. The more practical aspects of diffusion are described by reviews concerning interdiffusion in coatings and long-term thermomechanical behaviour.

Description: This fourth volume in the series covering the latest results in the field includes abstracts of papers which appeared within the approximate period of mid-2000 to mid-2001. The scope of this coverage includes, in addition to traditional semiconductors, the increasingly important carbide, nitride and silicide semiconductors. Semiconducting oxides are not covered, as information on these can be found in the "Defects and Diffusion in Ceramics Retrospective" series. The increasing interest in ceramic-type semiconductors is again reflected by the invited papers, which include an extensive review of the particular problems involved in growing GaN films on sapphire substrates. Nevertheless, established semiconductors continue to spring surprises and to offer new problems and these are also addressed here by a number of further detailed reviews of work on Si, InP and InGaP. Finally, new results are to be found here concerning diffusive processes and defect behaviour in Ge, GeSi, InGaAs, Si and ZnSe. Altogether, these 8 long reviews, 9 research papers and 752 selected abstracts provide an invaluable and up-to-date insight into current and future trends in semiconductor theory, processing and applications.

Description: This book covers, on close to 2000 pages, all aspects of basic and applied diffusion research in all important engineering materials, including metals and intermetallics, elemental and compound semiconductors, amorphous and nanocrystalline materials and oxides.
Volume is indexed by Thomson Reuters CPCI-S (WoS)

Description: This phenomenon (also known as the Compensation Effect) can occur in any situation which involves an activated process. However, the rule is still most commonly referred to in connection with diffusion phenomena. As the rule still tends to exist in a sort of limbo between fully accepted physical law and unexplained correlation, this volume presents a handy survey of relevant diffusion data reaching back as far as the 1930s.

Description: Recent advances in solid-state chemistry have resulted in substantial progress towards achieving a better understanding of the solid state, and have even led to the development of new predictive capabilities in crystal chemistry. Entirely new ways of studying and preparing advanced materials have been the result of pursuing the so-called "soft chemistry" approach to materials science.

Description: This latest annual look back at the subject includes review papers on some applications of mechanical spectroscopy and magnetic relaxation to the monitoring of diffusion, on the effect of positron diffusion upon their annihilation, on the wind force in electromigration, on the creep of nanocrystalline metals (as related to grain-boundary diffusion) and on self-interstitial atom behaviour at high temperatures in dense metals.

Description: This is the third special issue to cover recent progress in the field. As usual, priority in abstracting has been given to the most accessible work and, in particular, to those papers which furnish original data or report important new techniques, phenomena or anomalies; although there is also extensive coverage of more qualitative features of diffusion and defect phenomena, of the predictions of computer models, and of theoretical studies. As before, the usual definition of ‘ceramic’ has been widened so as to include all forms of carbon, and also some nitrides whose primary use is not that of a classical ceramic.