Defect and Diffusion Forum

ISSN: 1662-9507

Main Themes

Volumes
Edited by: David J. Fisher
Online since: January 1994
Description: Journal Issue

115-116

Edited by: David J. Fisher
Online since: April 1998
Description: Journal Issue

113-114

Edited by: David J. Fisher
Online since: September 2007

111-112

Edited by: D.J. Fisher
Online since: January 1994

109-110

Edited by: E. Muñoz Merino
Online since: February 1994
Description: During the last 25 years, the behavior of donors in III-V alloys has been the subject of a very extensive research effort. The research emphasis on AlGaAs compounds is motivated by the industrial importance of AlGaAs/GaAs heterojunction based devices. As seeing it now, "the DX center problem", the behavior of donors in III-V alloys, has shown to be unexpectedly difficult to understand. To determine the microscopic nature of the DX center is still a challenging problem.

108

Edited by: D.J. Fisher
Online since: January 1994
Description: Journal Issue

106-107

Edited by: Nickolay T. Bagraev
Online since: January 1993
Description: This volume focuses on current theoretical and experimental investigations of defects in III-V and II-VI compounds, silicon, germanium, Si-Ge alloys, and amorphous semiconductors. The discussions also address the metastability and superconductivity induced by point defects, dislocations and processing in semiconductors.
An important feature of this book are the special papers on defects in SiC and IV-VI compounds, and the contributions on hot topics such as nonequilibrium diffusion, negative-U defects and several new techniques.

103-105

Edited by: D.J. Fisher
Online since: January 1993

101-102

Edited by: D.J. Fisher
Online since: January 1993

99-100

Edited by: M. Koiwa, K. Hirano, H. Nakajima and T. Okada
Online since: January 1993

95-98

Showing 151 to 160 of 233 Main Themes