Defects and Diffusion in Semiconductors - An Annual Retrospective IX

Volumes 261-262

doi: 10.4028/

Paper Title Page

Authors: Eddy Simoen, Cor Claeys, Jan Vanhellemont

Abstract: This paper aims at reviewing the possibilities of using p-n junction diodes for lifetime and defect analysis in semiconductor materials. In...

Authors: Dmitri V. Lioubtchenko, Tatiana A. Briantseva, I.A. Markov, Tim J. Bullough

Abstract: In this work microrelief transformation of the (001) GaAs surface due to thin Al film deposition by means of the CBE method has been...

Authors: Vitor J.B. Torres, J. Coutinho, Patrick R. Briddon

Abstract: We have investigated the hydrogenation of the zinc acceptor in GaP and InP, and of the phosphorus acceptor in ZnTe, by computer modeling....

Authors: Li Qun Chen, Zheng Chen Qiu

Abstract: Using the first-principles self-consistent discrete variational method based upon density functional theory, we investigated the energetics...

Authors: Ya. Matychak, V. Fedirko, A. Prytula, I. Pohreljuk

Abstract: This paper deals with the development of a theoretical model for reactive diffusion during new-phase formation when its volume fraction is...

Authors: M.A. Abdel-Rahman, M.S. Abdallah, Emad A. Badawi

Abstract: Positron annihilation lifetime spectroscopy (PALS) is one of the nuclear techniques used in material science. (PALT) measurements are used...

Authors: Yu.A. Lyashenko, N.V. Zaitzeva, O.A. Shmatko

Abstract: A model of discontinuous precipitation in binary polycrystalline alloys at low temperatures is presented. The proposed approach allows...

Authors: M. Vasylyev, Sergey I. Sidorenko, S.M. Voloshko, V. Kostiuchenko, I.E. Kotenko

Abstract: Low-temperature diffusion in thin films of the stable isotopes, 56Fe/57Fe, was studied by applying secondary ion mass spectrometry (SIMS)....

Authors: Shao Yi Wu, Qiang Fu, Guang Duo Lu, Jin Song Yao

Abstract: The axial displacements for Co2+ and Ni3+ in Al2O3 are theoretically investigated starting from the perturbation formulas of the EPR...


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