Defect and Diffusion Forum

ISSN: 1662-9507

Main Themes

Volumes
Edited by: D.J. Fisher
Online since: July 1998
Description: This issue, and the ones which will follow year-by-year, can be regarded not only as supplements to the recent special 10-year retrospective volumes on Diffusion in Silicon (volumes 153-155) and Diffusion in III-V Compounds (volumes 157-159), but also as a return to the 'regular business' of Diffusion and Defect Forum's 30-year project of succinctly summarising recent progress in these fields.

The present volume abstracts those papers published during the approximate period from June 1997 to June 1998. Earlier papers have been included in order to make sure that the coverage is contiguous with volume 152 of Defect and Diffusion Forum; the most recent 'regular' issue. Due to vagaries in publication schedules, the 1998 cut-off point is not exact, but any omissions will be corrected in the next annual retrospective. General priority has been given to the most accessible work and, in particular, to those papers which furnish original data or report important new techniques, phenomena or anomalies. Lesser priority has been given to reviews and to entirely theoretical work.

162-163

Edited by: D.J. Fisher
Online since: May 1998
Description: Surface Diffusion and Surface Structure - Ten Years of Research The topic of surface diffusion continues to increase in importance, not only because of its practical importance in fields as diverse as catalysis and crystal growth/solidification, but also because this is a case in which fundamental diffusion processes can be monitored in extreme detail; even to the point of following a single migrating atom.

160-161

Edited by: D.J. Fisher
Online since: March 1998
Description: The inherently superior electron ballistic properties of GaAs, as compared with those of Si, have generated an ever-increasing pace of research on this semiconductor; thus making this volume a timely source of information.

157-159

Edited by: B. Bokstein and N. Balandina
Online since: February 1998
Description: The phenomena of grain boundary diffusion and grain boundary segregation play major roles in determining the properties and behavior of a wide variety of materials. Even though the basic principles have been known for a long time, the field continues to yield a number of very challenging questions.

156

Edited by: D.J. Fisher
Online since: November 1997
Description: This volume presents a thorough treatment of the subject, covering a full decade of progress in the understanding of Diffusion in Silicon.

153-155

Edited by: David J. Fisher
Online since: March 1997
Description: Journal issue

152

Online since: November 2007
Description: Journal issue

150-151

Edited by: David J. Fisher
Online since: March 1997
Description: Journal issue

148-149

Edited by: H. Mehrer, Chr. Herzig, N.A. Stolwijk, H. Bracht
Online since: January 1997
Description: These proceedings comprise the papers presented at the international conference on 'Diffusion in Materials (DIMAT-96)' held at Schloss Nordkirchen, Germany, August 1996 - the largest international diffusion conference so far held.
The two-volume set therefore covers a very broad spectrum of topics. From the materials point of view, metals, alloys, intermetallics, elemental and compound semiconductors, amorphous materials, nonmetals such as fast ionic conductors, oxides, nitrides, polymers and even melts were discussed.

143-147

Edited by: David J. Fisher
Online since: March 1997
Description: Journal issue

141-142

Showing 131 to 140 of 236 Main Themes