Description: This special issue collects together relevant data spanning the quarter-century from 1982 to 2007. It comprises 936 entries, 220 tables and 44 figures. Wherever possible, the data are presented as Arrhenius expressions, giving a total of 304. The materials covered number 410 in all and include oxides based upon aluminium, barium, bismuth, boron, caesium, calcium, cerium, chromium, cobalt, copper, erbium, gadolinium, gallium, germanium, indium, iridium, iron, lanthanum, lead, lithium, magnesium, manganese, mercury, molybdenum, neodymium, nickel, niobium, phosphorus, plutonium, potassium, praseodymium, ruthenium, samarium, scandium, silicon, sodium, strontium, tantalum, tellurium, terbium, thorium, tin, titanium, tungsten, uranium, vanadium, ytterbium, yttrium, zinc and zirconium, plus their many compounds and solid solutions. Altogether, this volume provides a wealth of information on the topic.
Description: This system, consisting of compositions lying between the end-members, CdTe and HgTe, constitutes perhaps the third most important semiconductor after Si and GaAs. Its importance stems from the ability to tailor the band-gap precisely between that (1.5eV) of the semiconductor, CdTe, and the zero value of the semi-metal, HgTe; giving, in particular, one of the most versatile infra-red detectors known. The intermediate compositions also benefit from the usual mechanisms which improve the mechanical properties of alloys.
Prof. Yong Ho Sohn, C. Campbell, D. Lewis and Afina Lupulescu
Online since: September 2007
Description: The continued development of advanced materials and processes requires an intimate understanding of diffusion mechanisms, and having the ability to model the diffusion-controlled phenomena which occur within materials during processing. Volume is indexed by Thomson Reuters CPCI-S (WoS).
Description: The question of the interrelationship between diffusion and stress is almost as old as the investigation of diffusion itself. Nowadays, the study of various diffusion and solid-state reaction processes in thin films and multilayers is a vital area of research activity in which, inevitably, diffusion-induced or thermal stresses are of primary importance. Volume is indexed by Thomson Reuters CPCI-S (WoS).
Description: The diffusion of atoms is an inherent feature of matter, and the rules which describe the phenomenon are important from both the purely practical and the theoretical perspectives: it is a major rate-controlling process in phase transformations, crystal growth, recrystallization and recovery, creep, sintering, surface treatment and many other situations. Being typically a non-equilibrium macroscopic phenomenon, diffusion can be properly described in terms of the thermodynamics of irreversible processes. At the same time, phenomenological diffusion characteristics represent the mean values of microscopic parameters and reflect the microscopic structure of matter. In the latter case, they contribute to providing a deeper understanding of the physical background to the observed behavior of matter in general. Volume is indexed by Thomson Reuters CPCI-S (WoS).
Description: This ninth volume in the series covering the latest results in the field includes abstracts of papers which appeared between the publication of Annual Retrospective VIII (Volumes 245-246) and the end of January 2007 (journal availability permitting).
Description: These volumes contain an extensive body of carefully selected data, on diffusion in non-ferrous materials, gleaned from research published in leading journals during the past few decades. The materials covered include less-common as well as common metals, in both the almost-pure and highly-alloyed states, and the chosen data take account of the effects of various special conditions (thin films, strain, radiation, etc.) upon bulk, surface and pipe diffusion.