Description: Volume is indexed by Thomson Reuters BCI (WoS). The motivation for this special-topic volume was two-fold. Among the various techniques for probing material properties at the atomic scale, PAC is a somewhat hidden gem. This is partly because PAC requires the use of radioisotopes; thus rendering it almost useless as a non-destructive characterization method. Moreover, there are relatively few PAC isotopes available; so it is not always possible to apply PAC to the most technologically pressing problems. Thus, PAC studies of materials are often more fundamental, and less applied, in nature. One of the goals of this volume was to raise the profile of PAC: in particular, for materials scientists, whose research could well benefit from adding this method to their tool-box. The second goal was to provide a single-source reference which illustrated the applicability of PAC to a wide range of materials. Part 1 consists of a number of comprehensive review articles concerning the technique itself and its state-of-the-art application to magnetic materials, ceramic oxides and nanostructured materials. Part 2 consists of papers which describe ongoing work on TiO2 nanomaterials, L12-structured intermetallic compounds, and wide-bandgap semiconductors. Overall, this is a valuable and unique guide to the subject.
B.S. Bokstein, A.O. Rodin and B.B. Straumal
Online since: March 2011
Description: This special collection concentrates on three basic topics, the 35 peer-reviewed papers being grouped into: 1. Grain Boundary Diffusion, Segregation and Stresses, 2. Bulk Diffusion and Phase Formation and 3. Diffusion-Controlled Processes. It provides succinct and timely coverage of these topics. Volume is indexed by Thomson Reuters CPCI-S (WoS).
Description: This second volume in a new series covering entirely general results in the fields of defects and diffusion includes 356 abstracts of papers which appeared between the end of 2009 and the end of 2010. As well as the abstracts, the volume includes original papers on theory/simulation, semiconductors and metals: “Predicting Diffusion Coefficients from First Principles …” (Mantina, Chen & Liu), “Gouge Assessment for Pipes …” (Meliani, Pluvinage & Capelle), “Simulation of the Impact Behaviour of … Hollow Sphere Structures” (Ferrano, Speich, Rimkus, Merkel & Öchsner), “Elastic-Plastic Fracture Mechanics Model …” (Liao), “Calculation of Fracture Toughness for Hydrogen Embrittlement …” (Mahdavi & Mashhadi), “… Method to Describe the Role of Diffusion in Catalyst Design” (Zeynali), “… Axial Shift and Spin Hamiltonian Parameters for Mn2+ in CdS …” (Wang, Wu, Hu & Xu), “Structure and Electronic Properties of Evaporated Thin Films of Lead Sulfide” (Ibrahim), “Acoustic Emission during Isothermal Oxidation of … Steel” (Jha, Mishra & Ojha), “… Carbon Content versus Heating Temperature in Austenitizing of Cast Iron” (Gong & Xiang), “Exploration of Parameters of Ashcroft’s Potential …” (Ghorai), Effect of Tribological Parameters upon Mechanical Wear …” (El Azizi, Meliani, Belalia & Benamar)
Description: This twelfth volume in the series covering the latest results in the field includes abstracts of papers which appeared between the publication of Annual Retrospective XI (Volume 293) and the end of September 2010 (journal availability permitting).
Description: This twelfth volume in the series covering the latest results in the field includes abstracts of papers which have appeared since the publication of Annual Retrospective XI (Volume 282). As well as the 565 semiconductor-related abstracts, the issue includes – in line with the policy of including original papers on all of the major material groups: “Study of Conduction Mechanism in Amorphous Se85-xTe15Bix Thin Films” (A.Sharma and P.B.Barman), “Structure and Optical Properties of Magnetron-Sputtered SiOx Layers with Silicon Nanoparticles” (L.Khomenkova, N.Korsunska, T.Stara, Y.Goldstein, J.Jedrzejewski, E.Savir, C.Sada and Y.Emirov), “Non-Gaussian Diffusion of Phosphorus and Arsenic in Silicon with Local Density Diffusivity Model” (F.Wirbeleit), “Artificial Aging Behavior of 6063 Alloy Studied using Vickers Hardness and Positron Annihilation Lifetime Techniques” (M.A.Abdel-Rahman, A.El-deen A.El-Nahhas, Y.A.Lotfy and E.A.Badawi), “Analysis of the Solid Solution Microstructure of (HF) Al-Zn Alloys” (H.Bedboudi, A.Bourbia, M.Draissiaa, S.Boulkhessaim and M.Y.Debili), “Liquid-Phase Sintering of Tungsten Heavy Alloys” (S.F.Moustafa, S.H.Kaitbay and G.M.Abdo), “Analysis of Stress Intensity Factor and Crack Propagation for Alloy X-750 Pressure Vessel with a Blunting Crack” (E.Mahdavi, M.M.Mashhadi and M.Amidpour), “Effect of Microstructure upon the Wear Properties of 2.25Cr-1Mo Steel” (B.B.Jha, B.K.Mishra, T.K.Sahoo, P.S.Mukherjee and S.N.Ojha), “Phase and Structure Formation of Metallic Materials Electrodeposited via a Liquid State Stage: New Experimental Proof” (O.Girin), “Testing Natural Aging Effect on Properties of 6066 & 6063 Alloys using Vickers Hardness and Positron Annihilation Lifetime Techniques” (M.A.Abdel-Rahman, A.A.Ahmed and E.A.Badawi), “Investigations of the Gyromagnetic Factors for the Ni3+ Center in MgO” (X.M.Li), “Variable Range Hopping (VRH) Model in Manganese Oxides” (H.Abdullah), “Theoretical Studies of the EPR Parameters for Rh+ in NaCl” (Z.H.Zhang, S.Y.Wu, P.Xu and L.L.Li), “The Effect of Droplet Diameter on the Separation of Heavy-Oil from Water using a Hydrocyclone” (F.P.M.Farias, C.J.O.Buriti, W.C.P.B.Lima, S.R.F. Neto and A.G.B.Lima) and “Spreading Exponents: Dynamics of Trisiloxane Wetting of Hydrophobic Surfaces” (J.Radulovic, K.Sefiane and M.E.R.Shanahan).
Description: This work is essentially an update of previous compilations of information on the diffusivity of elements in semiconductor-grade silicon. It subsumes the data contained in B.L.Sharma’s monograph on ‘Diffusion in Semiconductors‘ (Trans Tech Publications, 1970), plus the data contained in Diffusion and Defect Data (Diffusion in Silicon) Volume 45 (1986), Defect and Diffusion Forum (Diffusion in Silicon - 10 years of Research) Volumes 153-155 (1998), Defect and Diffusion Forum (Diffusion in Silicon - a Seven-Year Retrospective) Volume 241 (2005) and the latest data from recent Semiconductor Retrospectives: Defect and Diffusion Forum, Volumes 245-246, Volumes 261-262, Volume 272 and Volume 282. In addition, the resultant 400 items of data were analysed in the hope of finding some unifying correlation. It was indeed found that all of the points (each the average of many independent measurements) seemed to fall on a number of distinct straight lines passing through the origin of a plot of activation energy versus atomic radius. However, it remained unclear how these correlations could be explained.
Prof. Andreas Öchsner, Prof. Graeme E. Murch, Ali Shokuhfar and Prof. João M.P.Q. Delgado
Online since: April 2010
Description: Current water-treatment technologies require considerable energy consumption. Thus, closely linked to the problem of water shortage is the impending energy crisis. Therefore, intensive research is being aimed at developing water purification processes that are based upon using renewable energy, such as solar energy, rather than energy generated using fossil fuels. There has been an accumulation of reports on the development of photocatalysts, which enable water purification using solar energy as the only driving force. Such photocatalysts, based upon oxide semiconductors, permit the conversion of solar energy into the chemical energy that is required for the oxidation of toxic organic compounds in water. The most promising photocatalyst is titanium dioxide, TiO2, and its solid solutions. The research on TiO2 photocatalysis is multidisciplinary, and progress in this area requires the application of concepts of catalysis and photocatalysis as well as concepts of solid-state chemistry.
Description: This eleventh volume in the series covering the latest results in the field includes abstracts of papers which have appeared since the publication of Annual Retrospective X (Volumes 280-281). As well as the 589 ceramics abstracts, the issue includes original papers on all of the major material groups, and theory: “Positron Annihilation in Ion-Implanted ZnO” (A.D.Acharya, G.Singh and S.B.Shrivastava), “Optical Characteristics of Tungsten Oxide Thin Films Prepared by Sputtering Technique” (S.A.Aly), “Research on Magnetization Mechanism of Nano-Magnetic Fluid” (J.Li and D.Li), “Clustering of Arsenic Atoms in Silicon during Low-Temperature Annealing” (O.Velichko and O.Burunova), “Effect of Current Density on Composition and Microstructure of Si Diffusion Layer by Electrodeposition” (H.Yang, Y.Zhang, Y.Li, G.Tang and K.Jia), “Positron Annihilation & Micro-Hardness Measurement of 6063 and 6066 with Compromise with Ingot Al” (M.A.Abdel-Rahman, A.Al-deen and E.A.Badawi), “Stress-Induced Migration and Trapping of Hydrogen in AISI403 Steel” (G.P.Tiwari, V.D.Alur and E.Ramadasan), “Electromigration Force on a Proton with a Bound State” (A.Lodder).
Description: Volume is indexed by Thomson Reuters BCI (WoS). This first volume, in a new series covering entirely general results in the fields of defects and diffusion, includes abstracts of papers which appeared between the beginning of 2008 and the end of October 2009 (journal availability permitting).