A TEM Microstuctural Study of the Factors Affecting the Compositional Modulation in GaInAsSb/GaSb Films

Abstract:

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Quaternary semiconductor alloys based on GaSb are suitable for thermo-photo voltaic cell applications as they have low and adjustable band-gap. However, they exhibit phase separation which destroys band-gap uniformity. In this work, GalnAsSb thin films grown on GaSb vicinal substrates were studied by Transmission Electron Microscopy, in order to determine the influence of the growth parameters on phase separation. It was found that the coatings exhibit two types of compositional modulation, one parallel and the other forming an angle with the substrate plane.

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Periodical:

Pages:

131-136

DOI:

10.4028/www.scientific.net/JNanoR.10.131

Citation:

S. Konidaris et al., "A TEM Microstuctural Study of the Factors Affecting the Compositional Modulation in GaInAsSb/GaSb Films", Journal of Nano Research, Vol. 10, pp. 131-136, 2010

Online since:

April 2010

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$35.00

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