Interacting Double InAs/GaAs Quantum Dots of Cylindrical Symmetry

Beka Bochorishvili; Hariton M. Polatoglou

doi:10.4028/www.scientific.net/JNanoR.10.87

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HomeJournal of Nano ResearchJournal of Nano Research Vol. 10Interacting Double InAs/GaAs Quantum Dots of...

Interacting Double InAs/GaAs Quantum Dots of Cylindrical Symmetry

Abstract:

The electron and hole energy states and oscillator strengths for interband transitions of two interacting Quantum dots (QDs) are theoretically studied. We explore how the properties of the system depend on the distance between them. Calculations are done for InAs QDs which are embedded in GaAs. The QDs have cylindrical form and are situated one on top of the other in such way that their symmetry axes coincide. The calculations are done in the envelope function approximation using position dependent effective masses. Finite Element Method (FEM) is utilized to find energy spectra, wavefunctions and oscillator strengths. We find that the hole states show less tunneling compared to the electron states, transitions in general show some anisotropy which decreases as the distance between the dots decrease and that the total oscillator strength for each particular transition is constant.

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Journal of Nano Research (Volume 10)

Pages:

87-92

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https://doi.org/10.4028/www.scientific.net/JNanoR.10.87

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Online since:

April 2010

Authors:

Beka Bochorishvili, Hariton M. Polatoglou

Keywords:

Energy States, Finite Element Model (FEM), Optical Property, Quantum Dot (QD)

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