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HomeJournal of Nano ResearchJournal of Nano Research Vol. 28Infrared Plasmonics via ZnO

Infrared Plasmonics via ZnO

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Abstract:

Conventional plasmonic devices involve metals, but metal-based plasmonic resonances are mainly limited to λ_res < 1 μm, and thus metals interact effectively only with light in the UV and visible ranges. We show that highly doped ZnO can exhibit λ_res ≥ 1 μm, thus moving plasmonics into the IR range. We illustrate this capability with a set of thin (d = 25–147 nm) Al-doped ZnO (AZO) layers grown by RF sputtering on quartz glass. These samples employ a unique, 20-nm-thick, ZnON buffer layer, which minimizes the strong thickness dependence of mobility (μ) on thickness (d). A practical waveguide structure, using these measurements, is simulated with COMSOL Multiphysics software over a mid-IR wavelength range of 4–10 μm, with a detailed examination of propagation loss and plasmon confinement dimension. In many cases, L_plas < λ_light, thus showing that IR light can be manipulated in semiconductor materials at dimensions below the diffraction limit.

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Journal of Nano Research Vol. 28

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Periodical:

Journal of Nano Research (Volume 28)

Pages:

109-119

DOI:

https://doi.org/10.4028/www.scientific.net/JNanoR.28.109

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Online since:

June 2014

Authors:

J.W. Allen*, M.S. Allen, D.C. Look, B.R. Wenner, N. Itagaki, K. Matsushima, I. Surhariadi

Keywords:

Conducting Oxide, Plasmon, Subwavelength, Transparent, Waveguide

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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