Electron Transport through Thin SiO₂ Films Containing Si Nanoclusters

Abstract:

The electron transport mechanisms through nanocomposite SiO₂(Si) films containing Si nanoclusters into dielectric SiO₂ matrix have been investigated. SiO₂(Si) films were obtained by oxide assisted growth. At the first stage the SiO_x films with different content of excess Si were deposited by LP CVD method. Second stage includes high temperature (T=1100 C) annealing of SiO_x films that promotes formation of Si nanocrystals. Current transport through SiO₂(Si) films were studied in temperature range 100-350 K. As it was observed the dominant mechanism of electron transport depends as on voltage and temperature. The Mott’s conductivity caused by traps near Fermi level was revealed in low-voltage range for all temperatures. At increasing the voltage the SCLC conductivity is observed for films with higher content of excess silicon while in case low content of Si the Pool-Frenkel mechanism dominates. The further increase in voltage results in a double carrier injection.

• Periodical: Journal of Nano Research (Volume 39)
• Pages: 169-177
• DOI: https://doi.org/10.4028/www.scientific.net/JNanoR.39.169
• Online since: February 2016
• Authors: Anatoliy Kizjak, Anatoliy Evtukh, Olga Steblova, Yuriy Pedchenko
• Keywords: Carrier Transport, Mott Law Conductions, SCLC, Si Nanocluster, Space Charge Limited Current, Thin SiO₂ Film

References

[1] S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, E.F. Crabbe, K. Chan, A silicon nanocrystals based memory, Appl. Phys. Lett. 68 (1996) 1377-1379.

DOI: 10.1063/1.116085

[2] O.L. Bratus', A.A. Evtukh, V.A. Ievtukh, V.G. Litovchenko, Nanocomposite SiO2(Si) films as a medium for non-volatile memory. J. Non-Crystal. Solids, 354 (2008) 4278-4281.

DOI: 10.1016/j.jnoncrysol.2008.06.037

[3] A. Evtukh, O. Bratus', T. Gorbanyuk, V. Ievtukh, Electrical characterization of SiO2(Si) films as a medium for charge storage. Phys. Stat. Sol. (c). 5(12) (2008) 3663-3666.

DOI: 10.1002/pssc.200780165

[4] D.J. Lockwood, Light emission in silicon: from physics to devices, Semiconductors and Semimetals, Vol. 49, Academic press, San Diego, (1998).

[5] V. Kapaklis, C. Politis, P. Poulopoulos, P. Schweiss, Photoluminescence from silicon nanoparticles prepared from bulk amorphous silicon monoxide by the disproportionation reaction, Appl. Phys. Lett. 87, 123114 (2005).

DOI: 10.1063/1.2043246

[6] H. Rinnert, O. Jombois, M. Vergnat, M. Molinari, Study of the photoluminescence of amorphous and crystalline silicon clusters in SiOx thin films, Optical Materials, 27, 983-987 (2005).

DOI: 10.1016/j.optmat.2004.08.048

[7] H.I. Hanafi, S. Tiwari, I. Khan, Fast and long retention-time nano-crystal memory, IEEE Trans. Electron Dev. ED-43, 1553 (1996).

DOI: 10.1109/16.535349

[8] P. Normand, D. Tsoukalas, E. Kapetanakis, J.A. Van Der Berg, D.G. Armour, J. Stoemenos, C. Vieu, Electrochem. Solid-State Lett. 1, 88 (1998).

[9] J. von Borany, K.H. Heinig, R. Grotzschel, M. Klimenkov, M. Strobel, K.H. Stegemann, H.K. Thees, Microelectron. Eng. 48, 231 (1999).

DOI: 10.1016/s0167-9317(99)00377-9

[10] Li-Ping You, C.L. Heng, S.Y. Ma, Z.C. Ma, W.H. Zong, G.G. Long Wu, J. Cryst Growth 212, 109 (2000).

[11] L. Caristia, G. Nicotra, C. Bongiorno, N. Costa, S. Ravesi, S. Coffa, R. De Bastiani, M.G. Grimaldi, C. Spinella, The influence of hydrogen and nitrogen on the formation of Si nanoclusters embedded in sub-stoichiometric silicon oxide layers, Microelectron. Reliability. 47, 777-780 (2007).

DOI: 10.1016/j.microrel.2007.01.056

[12] F. Iacona, G. Franzo, C. Spinella, Correlation between luminescence and structural properties of Si nanocrystals , J. Appl. Phys. 87, 1295 (2000).

DOI: 10.1063/1.372013

[13] F. Iacona, C. Bongiorno, C. Spinella, S. Boninelli, F. Priolo, Formation and evolution of luminescent Si nanoclusters produced by thermal annealing of SiOx films, J. Appl. Phys. 95, 3723 (2004).

DOI: 10.1063/1.1664026

[14] M. Ben-Chorin, and F. Koch, Nonlinear electrical transport in porous silicon, Phys. Rev. B 49, 2981, (1994).

DOI: 10.1103/physrevb.49.2981

[15] H.W. Lau, O.K. an, and D.A. Trigg, Charge injection and tunneling mechanism of solid state reaction silicon nanocrystal film, Appl. Phys. Lett. 89, 113119 (2006).

DOI: 10.1063/1.2345257

[16] D. Song, E. C. Cho, G. Conibeer, Y. Huang, and M.A. Green, Fabrication and electrical characteristics of Si nanocrystal/c-Si heterojunctions, Appl. Phys. Lett. 91, 123510 (2007).

DOI: 10.1063/1.2787883

[17] B. Berghoff, S. Suckow, R. Rölver, B. Spangenberg, H. Kurz, A. Sologubenko and J. Mayer, Improved charge transport through Si based multiple quantum wells with substoichiometric SiOx barrier layers. J. Appl. Phys. 106, 083706 (2009).

DOI: 10.1063/1.3238294

[18] M.A. Lampert and P. Mark, Current Injection in Solids (Academic, New York, 1970).

[19] N.F. Mott and E.A. Davis, Electronic Processes in Non-cristalline Materials, second ed., Oxford University Press, Oxford, (1979).

[20] C. Godet, Variable range hopping revisited: the case of an exponential distribution of localized states. J. Non-Cryst. Solids. 333, 299–302 (2002).

DOI: 10.1016/s0022-3093(01)01008-0

[21] K.C. Kao and W. Hwang, Electrical Transport in Solids (Pergamon, Oxford, 1981).

[22] Y. Caglar, M. Caglar, S. Ilican, and F. Yakuphanoglu, Thermally stimulated current and space charge limited current mechanism in film of the gold/zinc oxide/gold type, Physica B 392, 99 (2007).

DOI: 10.1016/j.physb.2006.11.014

[23] P. Mark and W. Helfrich, Space-Charge-Limited Currents in Organic Crystals, J. Appl. Phys. 33, 205 (1962).

DOI: 10.1063/1.1728487

[24] V. Kumar, S.C. Jain, A.K. Kapoor, W. Geens, T. Aernauts, J. Poortmans, and R. Mertens, Trap density in conducting organic semiconductors determined from temperature dependence of J−V characteristics, J. Appl. Phys. 94, 1283 (2003).

DOI: 10.1063/1.1582552

[25] S.M. Sze, Physics of semiconductor Devices (Wiley-Interscience, Hoboken, 2007).