Comparative Analysis of Various Parameters of Tri-Gate MOSFET with High-K Spacer

Abstract:

In this paper, a comparative analysis of the Tri-gate MOSFET device structure with respect to Single Material Gate (SMG) Tri-gate MOSFET, Double Material Gate (DMG) Tri-gate MOSFET and Triple Material Gate (TMG) Tri-gate MOSFET with & without Hafnium dioxide as high-K dielectric material is employed using Silvaco TCAD Atlas Tool. It shows a compact model and better DC, AC performance for triple material gate structures and yields a high drive current of the device for TMG Tri-gate MOSFET with high-k dielectrics and shows a better electrical characteristics in comparison with other device structures.

• Periodical: Journal of Nano Research (Volume 56)
• Pages: 119-130
• DOI: https://doi.org/10.4028/www.scientific.net/JNanoR.56.119
• Online since: February 2019
• Authors: P. Vimala*, N.R. Nithin Kumar
• Keywords: DMG, Drain Current, Electric Field, MOSFET, Output Conductance, SMG, Surface Potential, TCAD, TMG Tri-Gate MOSFET, Transconductance

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